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Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

ABSTRACT: Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm(2) V(−1) s(−1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-...

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Detalles Bibliográficos
Autores principales: Wang, Wei, Wang, Liang, Dai, Gaole, Deng, Wei, Zhang, Xiujuan, Jie, Jiansheng, Zhang, Xiaohong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2017
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6199044/
https://www.ncbi.nlm.nih.gov/pubmed/30393747
http://dx.doi.org/10.1007/s40820-017-0153-5
Descripción
Sumario:ABSTRACT: Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm(2) V(−1) s(−1), demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 × 10 cm(2) wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm(2) V(−1) s(−1) (average mobility 1.2 cm(2) V(−1) s(−1)) and 3.0 cm(2) V(−1) s(−1) (average mobility 2.0 cm(2) V(−1) s(−1)), respectively. They both have a high on/off ratio (I (on)/I (off)) > 10(9). The performance can well satisfy the requirements for light-emitting diodes driving. GRAPHICAL ABSTRACT: [Image: see text] ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (doi:10.1007/s40820-017-0153-5) contains supplementary material, which is available to authorized users.