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Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition
The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate us...
Autores principales: | , , , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer Berlin Heidelberg
2017
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6199066/ https://www.ncbi.nlm.nih.gov/pubmed/30393669 http://dx.doi.org/10.1007/s40820-017-0173-1 |
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author | Tai, Lixuan Zhu, Daming Liu, Xing Yang, Tieying Wang, Lei Wang, Rui Jiang, Sheng Chen, Zhenhua Xu, Zhongmin Li, Xiaolong |
author_facet | Tai, Lixuan Zhu, Daming Liu, Xing Yang, Tieying Wang, Lei Wang, Rui Jiang, Sheng Chen, Zhenhua Xu, Zhongmin Li, Xiaolong |
author_sort | Tai, Lixuan |
collection | PubMed |
description | The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [Image: see text] ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1007/s40820-017-0173-1) contains supplementary material, which is available to authorized users. |
format | Online Article Text |
id | pubmed-6199066 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2017 |
publisher | Springer Berlin Heidelberg |
record_format | MEDLINE/PubMed |
spelling | pubmed-61990662018-11-02 Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition Tai, Lixuan Zhu, Daming Liu, Xing Yang, Tieying Wang, Lei Wang, Rui Jiang, Sheng Chen, Zhenhua Xu, Zhongmin Li, Xiaolong Nanomicro Lett Article The metal-free synthesis of graphene on single-crystal silicon substrates, the most common commercial semiconductor, is of paramount significance for many technological applications. In this work, we report the growth of graphene directly on an upside-down placed, single-crystal silicon substrate using metal-free, ambient-pressure chemical vapor deposition. By controlling the growth temperature, in-plane propagation, edge-propagation, and core-propagation, the process of graphene growth on silicon can be identified. This process produces atomically flat monolayer or bilayer graphene domains, concave bilayer graphene domains, and bulging few-layer graphene domains. This work would be a significant step toward the synthesis of large-area and layer-controlled, high-quality graphene on single-crystal silicon substrates. [Image: see text] ELECTRONIC SUPPLEMENTARY MATERIAL: The online version of this article (10.1007/s40820-017-0173-1) contains supplementary material, which is available to authorized users. Springer Berlin Heidelberg 2017-12-08 /pmc/articles/PMC6199066/ /pubmed/30393669 http://dx.doi.org/10.1007/s40820-017-0173-1 Text en © The Author(s) 2017 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. |
spellingShingle | Article Tai, Lixuan Zhu, Daming Liu, Xing Yang, Tieying Wang, Lei Wang, Rui Jiang, Sheng Chen, Zhenhua Xu, Zhongmin Li, Xiaolong Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition |
title | Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition |
title_full | Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition |
title_fullStr | Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition |
title_full_unstemmed | Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition |
title_short | Direct Growth of Graphene on Silicon by Metal-Free Chemical Vapor Deposition |
title_sort | direct growth of graphene on silicon by metal-free chemical vapor deposition |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6199066/ https://www.ncbi.nlm.nih.gov/pubmed/30393669 http://dx.doi.org/10.1007/s40820-017-0173-1 |
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