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Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI(3) perovskite photovoltaics
We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI(3) perovskite. Remarkably, when B-γ-CsSnI(3) perovskite is deposited from a dimethylformamide solutio...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6200744/ https://www.ncbi.nlm.nih.gov/pubmed/30356065 http://dx.doi.org/10.1038/s41598-018-33987-7 |
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author | Wijesekara, Anjana Varagnolo, Silvia Dabera, G. Dinesha M. R. Marshall, Kenneth P. Pereira, H. Jessica Hatton, Ross A. |
author_facet | Wijesekara, Anjana Varagnolo, Silvia Dabera, G. Dinesha M. R. Marshall, Kenneth P. Pereira, H. Jessica Hatton, Ross A. |
author_sort | Wijesekara, Anjana |
collection | PubMed |
description | We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI(3) perovskite. Remarkably, when B-γ-CsSnI(3) perovskite is deposited from a dimethylformamide solution onto a 180–190 nm thick CuSCN film supported on an indium-tin oxide (ITO) electrode, the CuSCN layer is completely displaced leaving a perovskite layer with high uniformity and coverage of the underlying ITO electrode. This finding is confirmed by detailed analysis of the thickness and composition of the film that remains after perovskite deposition, together with photovoltaic device studies. The results of this study show that, whilst CuSCN has proved to be an excellent hole-extraction layer for high performance lead-perovskite and organic photovoltaics, it is unsuitable as a hole-transport layer in inverted B-γ-CsSnI(3) perovskite photovoltaics processed from solution. |
format | Online Article Text |
id | pubmed-6200744 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-62007442018-10-25 Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI(3) perovskite photovoltaics Wijesekara, Anjana Varagnolo, Silvia Dabera, G. Dinesha M. R. Marshall, Kenneth P. Pereira, H. Jessica Hatton, Ross A. Sci Rep Article We report the findings of a study into the suitability of copper (I) thiocyanate (CuSCN) as a hole-transport layer in inverted photovoltaic (PV) devices based on the black gamma phase (B-γ) of CsSnI(3) perovskite. Remarkably, when B-γ-CsSnI(3) perovskite is deposited from a dimethylformamide solution onto a 180–190 nm thick CuSCN film supported on an indium-tin oxide (ITO) electrode, the CuSCN layer is completely displaced leaving a perovskite layer with high uniformity and coverage of the underlying ITO electrode. This finding is confirmed by detailed analysis of the thickness and composition of the film that remains after perovskite deposition, together with photovoltaic device studies. The results of this study show that, whilst CuSCN has proved to be an excellent hole-extraction layer for high performance lead-perovskite and organic photovoltaics, it is unsuitable as a hole-transport layer in inverted B-γ-CsSnI(3) perovskite photovoltaics processed from solution. Nature Publishing Group UK 2018-10-24 /pmc/articles/PMC6200744/ /pubmed/30356065 http://dx.doi.org/10.1038/s41598-018-33987-7 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Wijesekara, Anjana Varagnolo, Silvia Dabera, G. Dinesha M. R. Marshall, Kenneth P. Pereira, H. Jessica Hatton, Ross A. Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI(3) perovskite photovoltaics |
title | Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI(3) perovskite photovoltaics |
title_full | Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI(3) perovskite photovoltaics |
title_fullStr | Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI(3) perovskite photovoltaics |
title_full_unstemmed | Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI(3) perovskite photovoltaics |
title_short | Assessing the suitability of copper thiocyanate as a hole-transport layer in inverted CsSnI(3) perovskite photovoltaics |
title_sort | assessing the suitability of copper thiocyanate as a hole-transport layer in inverted cssni(3) perovskite photovoltaics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6200744/ https://www.ncbi.nlm.nih.gov/pubmed/30356065 http://dx.doi.org/10.1038/s41598-018-33987-7 |
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