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[Formula: see text] -symmetric interference transistor

We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: [Formula: see text] -symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecu...

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Detalles Bibliográficos
Autores principales: Gorbatsevich, Alexander A., Krasnikov, Gennadiy Ya., Shubin, Nikolay M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6202334/
https://www.ncbi.nlm.nih.gov/pubmed/30361561
http://dx.doi.org/10.1038/s41598-018-34132-0
Descripción
Sumario:We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: [Formula: see text] -symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realised in particular in a special class of molecules with degenerate energy levels, e.g. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads breaks the [Formula: see text] -symmetry of the system that, however, can be restored by application of the gate voltage preserving the mirror symmetry. [Formula: see text] -symmetry broken state at zero gate voltage with minimal transmission corresponds to the “off” state while the [Formula: see text] -symmetric state at non-zero gate voltage with maximum transmission – to the “on” state. At zero gate voltage energy of the antiresonance coincides with exceptional point. We construct a model of an all-electrical molecular switch based on such transistors acting as a conventional CMOS inverter and show that essentially lower power consumption and switching energy can be achieved, compared to the CMOS analogues.