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[Formula: see text] -symmetric interference transistor

We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: [Formula: see text] -symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecu...

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Autores principales: Gorbatsevich, Alexander A., Krasnikov, Gennadiy Ya., Shubin, Nikolay M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6202334/
https://www.ncbi.nlm.nih.gov/pubmed/30361561
http://dx.doi.org/10.1038/s41598-018-34132-0
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author Gorbatsevich, Alexander A.
Krasnikov, Gennadiy Ya.
Shubin, Nikolay M.
author_facet Gorbatsevich, Alexander A.
Krasnikov, Gennadiy Ya.
Shubin, Nikolay M.
author_sort Gorbatsevich, Alexander A.
collection PubMed
description We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: [Formula: see text] -symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realised in particular in a special class of molecules with degenerate energy levels, e.g. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads breaks the [Formula: see text] -symmetry of the system that, however, can be restored by application of the gate voltage preserving the mirror symmetry. [Formula: see text] -symmetry broken state at zero gate voltage with minimal transmission corresponds to the “off” state while the [Formula: see text] -symmetric state at non-zero gate voltage with maximum transmission – to the “on” state. At zero gate voltage energy of the antiresonance coincides with exceptional point. We construct a model of an all-electrical molecular switch based on such transistors acting as a conventional CMOS inverter and show that essentially lower power consumption and switching energy can be achieved, compared to the CMOS analogues.
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spelling pubmed-62023342018-10-29 [Formula: see text] -symmetric interference transistor Gorbatsevich, Alexander A. Krasnikov, Gennadiy Ya. Shubin, Nikolay M. Sci Rep Article We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: [Formula: see text] -symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realised in particular in a special class of molecules with degenerate energy levels, e.g. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads breaks the [Formula: see text] -symmetry of the system that, however, can be restored by application of the gate voltage preserving the mirror symmetry. [Formula: see text] -symmetry broken state at zero gate voltage with minimal transmission corresponds to the “off” state while the [Formula: see text] -symmetric state at non-zero gate voltage with maximum transmission – to the “on” state. At zero gate voltage energy of the antiresonance coincides with exceptional point. We construct a model of an all-electrical molecular switch based on such transistors acting as a conventional CMOS inverter and show that essentially lower power consumption and switching energy can be achieved, compared to the CMOS analogues. Nature Publishing Group UK 2018-10-25 /pmc/articles/PMC6202334/ /pubmed/30361561 http://dx.doi.org/10.1038/s41598-018-34132-0 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Gorbatsevich, Alexander A.
Krasnikov, Gennadiy Ya.
Shubin, Nikolay M.
[Formula: see text] -symmetric interference transistor
title [Formula: see text] -symmetric interference transistor
title_full [Formula: see text] -symmetric interference transistor
title_fullStr [Formula: see text] -symmetric interference transistor
title_full_unstemmed [Formula: see text] -symmetric interference transistor
title_short [Formula: see text] -symmetric interference transistor
title_sort [formula: see text] -symmetric interference transistor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6202334/
https://www.ncbi.nlm.nih.gov/pubmed/30361561
http://dx.doi.org/10.1038/s41598-018-34132-0
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