Enhanced excitonic emission efficiency in porous GaN

We investigate the optical properties of porous GaN films of different porosities, focusing on the behaviors of the excitonic features in time-integrated and time-resolved photoluminescence. A substantial enhancement of both excitonic emission intensity and recombination rate, along with insignifica...

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Detalles Bibliográficos
Autores principales: Ngo, Thi Huong, Gil, Bernard, Shubina, Tatiana V., Damilano, Benjamin, Vezian, Stéphane, Valvin, Pierre, Massies, Jean
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6202416/
https://www.ncbi.nlm.nih.gov/pubmed/30361633
http://dx.doi.org/10.1038/s41598-018-34185-1
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author Ngo, Thi Huong
Gil, Bernard
Shubina, Tatiana V.
Damilano, Benjamin
Vezian, Stéphane
Valvin, Pierre
Massies, Jean
author_facet Ngo, Thi Huong
Gil, Bernard
Shubina, Tatiana V.
Damilano, Benjamin
Vezian, Stéphane
Valvin, Pierre
Massies, Jean
author_sort Ngo, Thi Huong
collection PubMed
description We investigate the optical properties of porous GaN films of different porosities, focusing on the behaviors of the excitonic features in time-integrated and time-resolved photoluminescence. A substantial enhancement of both excitonic emission intensity and recombination rate, along with insignificant intensity weakening under temperature rise, is observed in the porous GaN films. These observations are in line with (i) the local concentration of electric field at GaN nanoparticles and pores due to the depolarization effect, (ii) the efficient light extraction from the nanoparticles. Besides, the porosification enlarges the surface of the air/semiconductor interface, which further promotes the extraction efficiency and suppresses non-radiative recombination channels. Our findings open a way to increasing the emission efficiency of nanophotonic devices based on porous GaN.
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spelling pubmed-62024162018-10-29 Enhanced excitonic emission efficiency in porous GaN Ngo, Thi Huong Gil, Bernard Shubina, Tatiana V. Damilano, Benjamin Vezian, Stéphane Valvin, Pierre Massies, Jean Sci Rep Article We investigate the optical properties of porous GaN films of different porosities, focusing on the behaviors of the excitonic features in time-integrated and time-resolved photoluminescence. A substantial enhancement of both excitonic emission intensity and recombination rate, along with insignificant intensity weakening under temperature rise, is observed in the porous GaN films. These observations are in line with (i) the local concentration of electric field at GaN nanoparticles and pores due to the depolarization effect, (ii) the efficient light extraction from the nanoparticles. Besides, the porosification enlarges the surface of the air/semiconductor interface, which further promotes the extraction efficiency and suppresses non-radiative recombination channels. Our findings open a way to increasing the emission efficiency of nanophotonic devices based on porous GaN. Nature Publishing Group UK 2018-10-25 /pmc/articles/PMC6202416/ /pubmed/30361633 http://dx.doi.org/10.1038/s41598-018-34185-1 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Ngo, Thi Huong
Gil, Bernard
Shubina, Tatiana V.
Damilano, Benjamin
Vezian, Stéphane
Valvin, Pierre
Massies, Jean
Enhanced excitonic emission efficiency in porous GaN
title Enhanced excitonic emission efficiency in porous GaN
title_full Enhanced excitonic emission efficiency in porous GaN
title_fullStr Enhanced excitonic emission efficiency in porous GaN
title_full_unstemmed Enhanced excitonic emission efficiency in porous GaN
title_short Enhanced excitonic emission efficiency in porous GaN
title_sort enhanced excitonic emission efficiency in porous gan
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6202416/
https://www.ncbi.nlm.nih.gov/pubmed/30361633
http://dx.doi.org/10.1038/s41598-018-34185-1
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