Cargando…
Electrical characterization and examination of temperature-induced degradation of metastable Ge(0.81)Sn(0.19) nanowires
Metastable germanium–tin alloys are promising materials for optoelectronics and optics. Here we present the first electrical characterization of highly crystalline Ge(0.81)Sn(0.19) nanowires grown in a solution-based process. The investigated Ge(0.81)Sn(0.19) nanowires reveal ohmic behavior with res...
Autores principales: | Sistani, M., Seifner, M. S., Bartmann, M. G., Smoliner, J., Lugstein, A., Barth, S. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Royal Society of Chemistry
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6202951/ https://www.ncbi.nlm.nih.gov/pubmed/30311606 http://dx.doi.org/10.1039/c8nr05296d |
Ejemplares similares
-
Solution-based low-temperature synthesis of germanium nanorods and nanowires
por: Pertl, Patrik, et al.
Publicado: (2018) -
Direct
Synthesis of Hyperdoped Germanium Nanowires
por: Seifner, Michael S., et al.
Publicado: (2018) -
Superconductivity with extremely large upper critical fields in Nb(2)Pd(0.81)S(5)
por: Zhang, Q., et al.
Publicado: (2013) -
Polarity Control in Ge Nanowires by Electronic Surface
Doping
por: Sistani, Masiar, et al.
Publicado: (2020) -
Electrical and Structural Properties of Si(1−x)Ge(x) Nanowires Prepared from a Single-Source Precursor
por: Behrle, Raphael, et al.
Publicado: (2023)