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Contactless photomagnetoelectric investigations of 2D semiconductors
Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction m...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Beilstein-Institut
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6204781/ https://www.ncbi.nlm.nih.gov/pubmed/30416925 http://dx.doi.org/10.3762/bjnano.9.256 |
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author | Nowak, Marian Jesionek, Marcin Solecka, Barbara Szperlich, Piotr Duka, Piotr Starczewska, Anna |
author_facet | Nowak, Marian Jesionek, Marcin Solecka, Barbara Szperlich, Piotr Duka, Piotr Starczewska, Anna |
author_sort | Nowak, Marian |
collection | PubMed |
description | Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependences of the PME magnetic moment, evoked in 2D Corbino configuration, on the magnetic field as well as on the intensity and spatial distribution of illumination. The theoretical predictions agree with the results of the contactless investigations performed on non-suspended single-layer graphene. We use the contactless PME method for determining the dependence of carrier mobility on the concentration of electrons and holes induced by a back-gate voltage. Conclusion: The presented contactless PME method, used in Corbino geometry, is complementary to the mobility extraction methods based on field-effect measurements. It can be used for determining the mobility and diffusion length of carriers in different 2D materials. |
format | Online Article Text |
id | pubmed-6204781 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Beilstein-Institut |
record_format | MEDLINE/PubMed |
spelling | pubmed-62047812018-11-09 Contactless photomagnetoelectric investigations of 2D semiconductors Nowak, Marian Jesionek, Marcin Solecka, Barbara Szperlich, Piotr Duka, Piotr Starczewska, Anna Beilstein J Nanotechnol Full Research Paper Background: Applications of two-dimensional (2D) materials in electronic devices require the development of appropriate measuring methods for determining their typical semiconductor parameters, i.e., mobility and carrier lifetime. Among these methods, contactless techniques and mobility extraction methods based on field-effect measurements are of great importance. Results: Here we show a contactless method for determining these parameters in 2D semiconductors that is based on the photomagnetoelectric (PME) effect (also known as the photoelectromagnetic effect). We present calculated dependences of the PME magnetic moment, evoked in 2D Corbino configuration, on the magnetic field as well as on the intensity and spatial distribution of illumination. The theoretical predictions agree with the results of the contactless investigations performed on non-suspended single-layer graphene. We use the contactless PME method for determining the dependence of carrier mobility on the concentration of electrons and holes induced by a back-gate voltage. Conclusion: The presented contactless PME method, used in Corbino geometry, is complementary to the mobility extraction methods based on field-effect measurements. It can be used for determining the mobility and diffusion length of carriers in different 2D materials. Beilstein-Institut 2018-10-25 /pmc/articles/PMC6204781/ /pubmed/30416925 http://dx.doi.org/10.3762/bjnano.9.256 Text en Copyright © 2018, Nowak et al. https://creativecommons.org/licenses/by/4.0https://www.beilstein-journals.org/bjnano/termsThis is an Open Access article under the terms of the Creative Commons Attribution License (https://creativecommons.org/licenses/by/4.0). Please note that the reuse, redistribution and reproduction in particular requires that the authors and source are credited. The license is subject to the Beilstein Journal of Nanotechnology terms and conditions: (https://www.beilstein-journals.org/bjnano/terms) |
spellingShingle | Full Research Paper Nowak, Marian Jesionek, Marcin Solecka, Barbara Szperlich, Piotr Duka, Piotr Starczewska, Anna Contactless photomagnetoelectric investigations of 2D semiconductors |
title | Contactless photomagnetoelectric investigations of 2D semiconductors |
title_full | Contactless photomagnetoelectric investigations of 2D semiconductors |
title_fullStr | Contactless photomagnetoelectric investigations of 2D semiconductors |
title_full_unstemmed | Contactless photomagnetoelectric investigations of 2D semiconductors |
title_short | Contactless photomagnetoelectric investigations of 2D semiconductors |
title_sort | contactless photomagnetoelectric investigations of 2d semiconductors |
topic | Full Research Paper |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6204781/ https://www.ncbi.nlm.nih.gov/pubmed/30416925 http://dx.doi.org/10.3762/bjnano.9.256 |
work_keys_str_mv | AT nowakmarian contactlessphotomagnetoelectricinvestigationsof2dsemiconductors AT jesionekmarcin contactlessphotomagnetoelectricinvestigationsof2dsemiconductors AT soleckabarbara contactlessphotomagnetoelectricinvestigationsof2dsemiconductors AT szperlichpiotr contactlessphotomagnetoelectricinvestigationsof2dsemiconductors AT dukapiotr contactlessphotomagnetoelectricinvestigationsof2dsemiconductors AT starczewskaanna contactlessphotomagnetoelectricinvestigationsof2dsemiconductors |