High-Performance Thin Film Transistor with an Neodymium-Doped Indium Zinc Oxide/Al(2)O(3) Nanolaminate Structure Processed at Room Temperature

In this work, a high-performance thin film transistor with an neodymium-doped indium zinc oxide (Nd:IZO) semiconductor via a room temperature approach and adopting the Nd:IZO/Al(2)O(3) nanolaminate structure was investigated. The effects of the ultrathin Al(2)O(3) layer and the thickness of Nd:IZO l...

Descripción completa

Detalles Bibliográficos
Autores principales: Yao, Rihui, Li, Xiaoqing, Zheng, Zeke, Zhang, Xiaochen, Xiong, Mei, Xiao, Song, Ning, Honglong, Wang, Xiaofeng, Wu, Yuxiang, Peng, Junbiao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6213881/
https://www.ncbi.nlm.nih.gov/pubmed/30275382
http://dx.doi.org/10.3390/ma11101871

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6213881/
https://www.ncbi.nlm.nih.gov/pubmed/30275382
http://dx.doi.org/10.3390/ma11101871

Ejemplares similares