Operation Mechanism of a MoS(2)/BP Heterojunction FET

The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS(2)/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 10(7), with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current...

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Autores principales: Lim, Sung Kwan, Kang, Soo Cheol, Yoo, Tae Jin, Lee, Sang Kyung, Hwang, Hyeon Jun, Lee, Byoung Hun
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215131/
https://www.ncbi.nlm.nih.gov/pubmed/30301261
http://dx.doi.org/10.3390/nano8100797
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author Lim, Sung Kwan
Kang, Soo Cheol
Yoo, Tae Jin
Lee, Sang Kyung
Hwang, Hyeon Jun
Lee, Byoung Hun
author_facet Lim, Sung Kwan
Kang, Soo Cheol
Yoo, Tae Jin
Lee, Sang Kyung
Hwang, Hyeon Jun
Lee, Byoung Hun
author_sort Lim, Sung Kwan
collection PubMed
description The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS(2)/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 10(7), with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current.
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spelling pubmed-62151312018-11-14 Operation Mechanism of a MoS(2)/BP Heterojunction FET Lim, Sung Kwan Kang, Soo Cheol Yoo, Tae Jin Lee, Sang Kyung Hwang, Hyeon Jun Lee, Byoung Hun Nanomaterials (Basel) Article The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS(2)/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 10(7), with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current. MDPI 2018-10-07 /pmc/articles/PMC6215131/ /pubmed/30301261 http://dx.doi.org/10.3390/nano8100797 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Lim, Sung Kwan
Kang, Soo Cheol
Yoo, Tae Jin
Lee, Sang Kyung
Hwang, Hyeon Jun
Lee, Byoung Hun
Operation Mechanism of a MoS(2)/BP Heterojunction FET
title Operation Mechanism of a MoS(2)/BP Heterojunction FET
title_full Operation Mechanism of a MoS(2)/BP Heterojunction FET
title_fullStr Operation Mechanism of a MoS(2)/BP Heterojunction FET
title_full_unstemmed Operation Mechanism of a MoS(2)/BP Heterojunction FET
title_short Operation Mechanism of a MoS(2)/BP Heterojunction FET
title_sort operation mechanism of a mos(2)/bp heterojunction fet
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215131/
https://www.ncbi.nlm.nih.gov/pubmed/30301261
http://dx.doi.org/10.3390/nano8100797
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