Nb(2)O(5) and Ti-Doped Nb(2)O(5) Charge Trapping Nano-Layers Applied in Flash Memory

High-k material charge trapping nano-layers in flash memory applications have faster program/erase speeds and better data retention because of larger conduction band offsets and higher dielectric constants. In addition, Ti-doped high-k materials can improve memory device performance, such as leakage...

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Detalles Bibliográficos
Autores principales: Wang, Jer Chyi, Kao, Chyuan Haur, Wu, Chien Hung, Lin, Chun Fu, Lin, Chih Ju
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215173/
https://www.ncbi.nlm.nih.gov/pubmed/30297613
http://dx.doi.org/10.3390/nano8100799

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215173/
https://www.ncbi.nlm.nih.gov/pubmed/30297613
http://dx.doi.org/10.3390/nano8100799

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