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Characteristics of Graphene Oxide Films Reduced by Using an Atmospheric Plasma System
The chemical oxidation method can be used to mass-produce graphene oxides (GOs) from highly oriented pyrolytic graphite. However, numerous oxygen-containing functional groups (hydroxyl, epoxy, carbonyl, etc.) exist in typical GO surfaces, resulting in serious electrical losses. Hence, GO must be pro...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215230/ https://www.ncbi.nlm.nih.gov/pubmed/30297658 http://dx.doi.org/10.3390/nano8100802 |
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author | Yang, Chii-Rong Tseng, Shih-Feng Chen, Yu-Ting |
author_facet | Yang, Chii-Rong Tseng, Shih-Feng Chen, Yu-Ting |
author_sort | Yang, Chii-Rong |
collection | PubMed |
description | The chemical oxidation method can be used to mass-produce graphene oxides (GOs) from highly oriented pyrolytic graphite. However, numerous oxygen-containing functional groups (hydroxyl, epoxy, carbonyl, etc.) exist in typical GO surfaces, resulting in serious electrical losses. Hence, GO must be processed into reduced graphene oxide (rGO) by the removal of most of the oxygen-containing functional groups. This research concentrates on the reduction efficiency of GO films that are manufactured using atmospheric-pressure and continuous plasma irradiation. Before and after sessions of plasma irradiation with various irradiation times, shelters, and working distances, the surface, physical, and electrical characteristics of homemade GO and rGO films are measured and analyzed. Experimental results showed that the sheet resistance values of rGO films with silicon or quartz shelters were markedly lower than those of GO films because the rGO films were mostly deprived of oxygen-containing functional groups. The lowest sheet resistance value and the largest carbon-to-oxygen ratio of typical rGO films were approximately 90 Ω/sq and 1.522, respectively. The intensity of the C–O bond peak in typical rGO films was significantly lower than that in GO films. Moreover, the intensity of the C–C bond peak in typical rGO films was considerably higher than that in GO films. |
format | Online Article Text |
id | pubmed-6215230 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-62152302018-11-14 Characteristics of Graphene Oxide Films Reduced by Using an Atmospheric Plasma System Yang, Chii-Rong Tseng, Shih-Feng Chen, Yu-Ting Nanomaterials (Basel) Article The chemical oxidation method can be used to mass-produce graphene oxides (GOs) from highly oriented pyrolytic graphite. However, numerous oxygen-containing functional groups (hydroxyl, epoxy, carbonyl, etc.) exist in typical GO surfaces, resulting in serious electrical losses. Hence, GO must be processed into reduced graphene oxide (rGO) by the removal of most of the oxygen-containing functional groups. This research concentrates on the reduction efficiency of GO films that are manufactured using atmospheric-pressure and continuous plasma irradiation. Before and after sessions of plasma irradiation with various irradiation times, shelters, and working distances, the surface, physical, and electrical characteristics of homemade GO and rGO films are measured and analyzed. Experimental results showed that the sheet resistance values of rGO films with silicon or quartz shelters were markedly lower than those of GO films because the rGO films were mostly deprived of oxygen-containing functional groups. The lowest sheet resistance value and the largest carbon-to-oxygen ratio of typical rGO films were approximately 90 Ω/sq and 1.522, respectively. The intensity of the C–O bond peak in typical rGO films was significantly lower than that in GO films. Moreover, the intensity of the C–C bond peak in typical rGO films was considerably higher than that in GO films. MDPI 2018-10-08 /pmc/articles/PMC6215230/ /pubmed/30297658 http://dx.doi.org/10.3390/nano8100802 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Yang, Chii-Rong Tseng, Shih-Feng Chen, Yu-Ting Characteristics of Graphene Oxide Films Reduced by Using an Atmospheric Plasma System |
title | Characteristics of Graphene Oxide Films Reduced by Using an Atmospheric Plasma System |
title_full | Characteristics of Graphene Oxide Films Reduced by Using an Atmospheric Plasma System |
title_fullStr | Characteristics of Graphene Oxide Films Reduced by Using an Atmospheric Plasma System |
title_full_unstemmed | Characteristics of Graphene Oxide Films Reduced by Using an Atmospheric Plasma System |
title_short | Characteristics of Graphene Oxide Films Reduced by Using an Atmospheric Plasma System |
title_sort | characteristics of graphene oxide films reduced by using an atmospheric plasma system |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215230/ https://www.ncbi.nlm.nih.gov/pubmed/30297658 http://dx.doi.org/10.3390/nano8100802 |
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