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Overview of Phase-Change Electrical Probe Memory
Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approac...
Autores principales: | , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215280/ https://www.ncbi.nlm.nih.gov/pubmed/30274283 http://dx.doi.org/10.3390/nano8100772 |
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author | Wang, Lei Ren, Wang Wen, Jing Xiong, Bangshu |
author_facet | Wang, Lei Ren, Wang Wen, Jing Xiong, Bangshu |
author_sort | Wang, Lei |
collection | PubMed |
description | Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects. |
format | Online Article Text |
id | pubmed-6215280 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-62152802018-11-14 Overview of Phase-Change Electrical Probe Memory Wang, Lei Ren, Wang Wen, Jing Xiong, Bangshu Nanomaterials (Basel) Review Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects. MDPI 2018-09-29 /pmc/articles/PMC6215280/ /pubmed/30274283 http://dx.doi.org/10.3390/nano8100772 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Review Wang, Lei Ren, Wang Wen, Jing Xiong, Bangshu Overview of Phase-Change Electrical Probe Memory |
title | Overview of Phase-Change Electrical Probe Memory |
title_full | Overview of Phase-Change Electrical Probe Memory |
title_fullStr | Overview of Phase-Change Electrical Probe Memory |
title_full_unstemmed | Overview of Phase-Change Electrical Probe Memory |
title_short | Overview of Phase-Change Electrical Probe Memory |
title_sort | overview of phase-change electrical probe memory |
topic | Review |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215280/ https://www.ncbi.nlm.nih.gov/pubmed/30274283 http://dx.doi.org/10.3390/nano8100772 |
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