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Overview of Phase-Change Electrical Probe Memory

Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approac...

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Detalles Bibliográficos
Autores principales: Wang, Lei, Ren, Wang, Wen, Jing, Xiong, Bangshu
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215280/
https://www.ncbi.nlm.nih.gov/pubmed/30274283
http://dx.doi.org/10.3390/nano8100772
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author Wang, Lei
Ren, Wang
Wen, Jing
Xiong, Bangshu
author_facet Wang, Lei
Ren, Wang
Wen, Jing
Xiong, Bangshu
author_sort Wang, Lei
collection PubMed
description Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects.
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spelling pubmed-62152802018-11-14 Overview of Phase-Change Electrical Probe Memory Wang, Lei Ren, Wang Wen, Jing Xiong, Bangshu Nanomaterials (Basel) Review Phase-change electrical probe memory has recently attained considerable attention owing to its profound potential for next-generation mass and archival storage devices. To encourage more talented researchers to enter this field and thereby advance this technology, this paper first introduces approaches to induce the phase transformation of chalcogenide alloy by probe tip, considered as the root of phase-change electrical probe memory. Subsequently the design rule of an optimized architecture of phase-change electrical probe memory is proposed based on a previously developed electrothermal and phase kinetic model, followed by a summary of the state-of-the-art phase-change electrical probe memory and an outlook for its future prospects. MDPI 2018-09-29 /pmc/articles/PMC6215280/ /pubmed/30274283 http://dx.doi.org/10.3390/nano8100772 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Review
Wang, Lei
Ren, Wang
Wen, Jing
Xiong, Bangshu
Overview of Phase-Change Electrical Probe Memory
title Overview of Phase-Change Electrical Probe Memory
title_full Overview of Phase-Change Electrical Probe Memory
title_fullStr Overview of Phase-Change Electrical Probe Memory
title_full_unstemmed Overview of Phase-Change Electrical Probe Memory
title_short Overview of Phase-Change Electrical Probe Memory
title_sort overview of phase-change electrical probe memory
topic Review
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6215280/
https://www.ncbi.nlm.nih.gov/pubmed/30274283
http://dx.doi.org/10.3390/nano8100772
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