Resistive Switching Memory of TiO(2) Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method

The resistive switching characteristics of TiO(2) nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO(2) nanowires, making the preparation straightforward. It also acts as...

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Detalles Bibliográficos
Autores principales: Xiao, Ming, Musselman, Kevin P., Duley, Walter W., Zhou, Norman Y.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer Berlin Heidelberg 2016
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223795/
https://www.ncbi.nlm.nih.gov/pubmed/30460312
http://dx.doi.org/10.1007/s40820-016-0116-2
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author Xiao, Ming
Musselman, Kevin P.
Duley, Walter W.
Zhou, Norman Y.
author_facet Xiao, Ming
Musselman, Kevin P.
Duley, Walter W.
Zhou, Norman Y.
author_sort Xiao, Ming
collection PubMed
description The resistive switching characteristics of TiO(2) nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO(2) nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO(2) nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 10(4) s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO(2) nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future. [Image: see text]
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spelling pubmed-62237952018-11-18 Resistive Switching Memory of TiO(2) Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method Xiao, Ming Musselman, Kevin P. Duley, Walter W. Zhou, Norman Y. Nanomicro Lett Article The resistive switching characteristics of TiO(2) nanowire networks directly grown on Ti foil by a single-step hydrothermal technique are discussed in this paper. The Ti foil serves as the supply of Ti atoms for growth of the TiO(2) nanowires, making the preparation straightforward. It also acts as a bottom electrode for the device. A top Al electrode was fabricated by e-beam evaporation process. The Al/TiO(2) nanowire networks/Ti device fabricated in this way displayed a highly repeatable and electroforming-free bipolar resistive behavior with retention for more than 10(4) s and an OFF/ON ratio of approximately 70. The switching mechanism of this Al/TiO(2) nanowire networks/Ti device is suggested to arise from the migration of oxygen vacancies under applied electric field. This provides a facile way to obtain metal oxide nanowire-based ReRAM device in the future. [Image: see text] Springer Berlin Heidelberg 2016-11-21 /pmc/articles/PMC6223795/ /pubmed/30460312 http://dx.doi.org/10.1007/s40820-016-0116-2 Text en © The Author(s) 2016 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Article
Xiao, Ming
Musselman, Kevin P.
Duley, Walter W.
Zhou, Norman Y.
Resistive Switching Memory of TiO(2) Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
title Resistive Switching Memory of TiO(2) Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
title_full Resistive Switching Memory of TiO(2) Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
title_fullStr Resistive Switching Memory of TiO(2) Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
title_full_unstemmed Resistive Switching Memory of TiO(2) Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
title_short Resistive Switching Memory of TiO(2) Nanowire Networks Grown on Ti Foil by a Single Hydrothermal Method
title_sort resistive switching memory of tio(2) nanowire networks grown on ti foil by a single hydrothermal method
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6223795/
https://www.ncbi.nlm.nih.gov/pubmed/30460312
http://dx.doi.org/10.1007/s40820-016-0116-2
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