Insights into the Role of Plasma in Atmospheric Pressure Chemical Vapor Deposition of Titanium Dioxide Thin Films

In this work, the effect of plasma on the chemistry and morphology of coatings deposited by Atmospheric Pressure Plasma Enhanced Chemical Vapor Deposition (AP-PECVD) is investigated. To do so, plasma deposited amorphous titanium dioxide (TiO(2)) thin films are compared to thin films deposited using Atmospheric Pressure Chemical Vapor Deposition (AP-CVD) not involving the use of plasma. We focus here on the effect and the interest of plasma in the AP-PECVD process over AP-CVD for low substrate temperature deposition. The advantages of AP-PECVD over AP-CVD are often suggested in many articles however no direct evidence of the role of the plasma for TiO(2) deposition at atmospheric pressure was reported. Hence, herein, the deposition via both methods is directly compared by depositing coatings with and without plasma using the same CVD reactor. Through the control of the plasma parameters, we are able to form low carbon coatings at low temperature with a deposition rate twice faster than AP-CVD, clearly showing the interest of plasma. Plasma enhanced methods are promising for the deposition of coatings at industrial scale over large surface and at high rate.