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Tensilely Strained Ge Films on Si Substrates Created by Physical Vapor Deposition of Solid Sources
The development of Si-compatible active photonic devices is a high priority in computer and modern electronics industry. Ge is compatible with Si and is a promising light emission material. Nearly all Ge-on-Si materials reported so far were grown using toxic precursor gases. Here we demonstrate the...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2018
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6233212/ https://www.ncbi.nlm.nih.gov/pubmed/30425315 http://dx.doi.org/10.1038/s41598-018-35224-7 |