Cargando…
Growth and anisotropy of transport properties of CuGaSe(2) single crystals
Single crystals of [Formula: see text] are prepared by a technique based on the vertical Bridgman procedure. The crystal chemical and phase compositions were identified by using dispersive X-ray fluorescence spectrometry and X-ray diffraction data analysis, respectively. The Hall effect and the elec...
Autores principales: | Mobarak, M., Ashari, M., Nassary, M.M., Fatma, S.G. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Elsevier
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6251020/ https://www.ncbi.nlm.nih.gov/pubmed/30839870 http://dx.doi.org/10.1016/j.heliyon.2018.e00952 |
Ejemplares similares
-
Preparation of a CuGaSe(2) single crystal and its photocathodic properties
por: Ikeda, Shigeru, et al.
Publicado: (2020) -
Controllable synthesis of non-layered two-dimensional plate-like CuGaSe(2) materials for optoelectronic devices
por: Feng, Wenling, et al.
Publicado: (2021) -
Effects of growth technique on the microstructure of CuInSe(2) ternary semiconductor compound
por: Mobarak, M., et al.
Publicado: (2020) -
Optically induced metastability in Cu(In,Ga)Se(2)
por: Jensen, S. A., et al.
Publicado: (2017) -
Resonance and antiresonance in Raman scattering in GaSe and InSe crystals
por: Osiekowicz, M., et al.
Publicado: (2021)