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Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system

Demonstration of ultralow energy switching mechanisms is imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their manipulation promise an ideal combination of state variables to reach attojoule range for logic and memory (i.e., ~30× lower s...

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Autores principales: Manipatruni, Sasikanth, Nikonov, Dmitri E., Lin, Chia-Ching, Prasad, Bhagwati, Huang, Yen-Lin, Damodaran, Anoop R., Chen, Zuhuang, Ramesh, Ramamoorthy, Young, Ian A.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6251722/
https://www.ncbi.nlm.nih.gov/pubmed/30480090
http://dx.doi.org/10.1126/sciadv.aat4229
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author Manipatruni, Sasikanth
Nikonov, Dmitri E.
Lin, Chia-Ching
Prasad, Bhagwati
Huang, Yen-Lin
Damodaran, Anoop R.
Chen, Zuhuang
Ramesh, Ramamoorthy
Young, Ian A.
author_facet Manipatruni, Sasikanth
Nikonov, Dmitri E.
Lin, Chia-Ching
Prasad, Bhagwati
Huang, Yen-Lin
Damodaran, Anoop R.
Chen, Zuhuang
Ramesh, Ramamoorthy
Young, Ian A.
author_sort Manipatruni, Sasikanth
collection PubMed
description Demonstration of ultralow energy switching mechanisms is imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their manipulation promise an ideal combination of state variables to reach attojoule range for logic and memory (i.e., ~30× lower switching energy than nanoelectronics). In BiFeO(3) (BFO), the coupling between the antiferromagnetic (AFM) and FE order is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS (complementary metal-oxide semiconductor) era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as Co(0.9)Fe(0.1) or La(0.7)Sr(0.3)MnO(3). Previous research has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field. However, voltage modulation of unidirectional anisotropy, which is preferred for logic and memory technologies, has not yet been demonstrated. Here, we present evidence for electric field control of exchange bias of laterally scaled spin valves that is exchange coupled to BFO at room temperature. We show that the exchange bias in this bilayer is robust, electrically controlled, and reversible. We anticipate that magnetoelectricity at these scaled dimensions provides a powerful pathway for computing beyond modern nanoelectronics by enabling a new class of nonvolatile, ultralow energy computing elements.
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spelling pubmed-62517222018-11-26 Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system Manipatruni, Sasikanth Nikonov, Dmitri E. Lin, Chia-Ching Prasad, Bhagwati Huang, Yen-Lin Damodaran, Anoop R. Chen, Zuhuang Ramesh, Ramamoorthy Young, Ian A. Sci Adv Research Articles Demonstration of ultralow energy switching mechanisms is imperative for continued improvements in computing devices. Ferroelectric (FE) and multiferroic (MF) order and their manipulation promise an ideal combination of state variables to reach attojoule range for logic and memory (i.e., ~30× lower switching energy than nanoelectronics). In BiFeO(3) (BFO), the coupling between the antiferromagnetic (AFM) and FE order is robust at room temperature, scalable in voltage, stabilized by the FE order, and can be integrated into a fabrication process for a beyond-CMOS (complementary metal-oxide semiconductor) era. The presence of the AFM order and a canted magnetic moment in this system causes exchange interaction with a ferromagnet such as Co(0.9)Fe(0.1) or La(0.7)Sr(0.3)MnO(3). Previous research has shown that exchange coupling (uniaxial anisotropy) can be controlled with an electric field. However, voltage modulation of unidirectional anisotropy, which is preferred for logic and memory technologies, has not yet been demonstrated. Here, we present evidence for electric field control of exchange bias of laterally scaled spin valves that is exchange coupled to BFO at room temperature. We show that the exchange bias in this bilayer is robust, electrically controlled, and reversible. We anticipate that magnetoelectricity at these scaled dimensions provides a powerful pathway for computing beyond modern nanoelectronics by enabling a new class of nonvolatile, ultralow energy computing elements. American Association for the Advancement of Science 2018-11-23 /pmc/articles/PMC6251722/ /pubmed/30480090 http://dx.doi.org/10.1126/sciadv.aat4229 Text en Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works. Distributed under a Creative Commons Attribution NonCommercial License 4.0 (CC BY-NC). http://creativecommons.org/licenses/by-nc/4.0/ This is an open-access article distributed under the terms of the Creative Commons Attribution-NonCommercial license (http://creativecommons.org/licenses/by-nc/4.0/) , which permits use, distribution, and reproduction in any medium, so long as the resultant use is not for commercial advantage and provided the original work is properly cited.
spellingShingle Research Articles
Manipatruni, Sasikanth
Nikonov, Dmitri E.
Lin, Chia-Ching
Prasad, Bhagwati
Huang, Yen-Lin
Damodaran, Anoop R.
Chen, Zuhuang
Ramesh, Ramamoorthy
Young, Ian A.
Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
title Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
title_full Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
title_fullStr Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
title_full_unstemmed Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
title_short Voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
title_sort voltage control of unidirectional anisotropy in ferromagnet-multiferroic system
topic Research Articles
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6251722/
https://www.ncbi.nlm.nih.gov/pubmed/30480090
http://dx.doi.org/10.1126/sciadv.aat4229
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