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Enhancement in surface mobility and quantum transport of Bi(2−x)Sb(x)Te(3−y)Se(y) topological insulator by controlling the crystal growth conditions
Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe(2)...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6251917/ https://www.ncbi.nlm.nih.gov/pubmed/30470769 http://dx.doi.org/10.1038/s41598-018-35674-z |
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author | Han, Kyu-Bum Chong, Su Kong Oliynyk, Anton O. Nagaoka, Akira Petryk, Suzanne Scarpulla, Michael A. Deshpande, Vikram V. Sparks, Taylor D. |
author_facet | Han, Kyu-Bum Chong, Su Kong Oliynyk, Anton O. Nagaoka, Akira Petryk, Suzanne Scarpulla, Michael A. Deshpande, Vikram V. Sparks, Taylor D. |
author_sort | Han, Kyu-Bum |
collection | PubMed |
description | Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe(2) (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field. |
format | Online Article Text |
id | pubmed-6251917 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-62519172018-11-30 Enhancement in surface mobility and quantum transport of Bi(2−x)Sb(x)Te(3−y)Se(y) topological insulator by controlling the crystal growth conditions Han, Kyu-Bum Chong, Su Kong Oliynyk, Anton O. Nagaoka, Akira Petryk, Suzanne Scarpulla, Michael A. Deshpande, Vikram V. Sparks, Taylor D. Sci Rep Article Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods on the synthesis of single crystal stoichiometric BiSbTeSe(2) (BSTS). Three types of BSTS samples are prepared using three different methods, namely melting growth (MG), Bridgman growth (BG) and two-step melting-Bridgman growth (MBG). Our results show that the crystal quality of the BSTS depend strongly on the growth method. Crystal structure and composition analyses suggest a better homogeneity and highly-ordered crystal structure in BSTS grown by MBG method. This correlates well to sample electrical transport properties, where a substantial improvement in surface mobility is observed in MBG BSTS devices. The enhancement in crystal quality and mobility allow the observation of well-developed quantum Hall effect at low magnetic field. Nature Publishing Group UK 2018-11-23 /pmc/articles/PMC6251917/ /pubmed/30470769 http://dx.doi.org/10.1038/s41598-018-35674-z Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Han, Kyu-Bum Chong, Su Kong Oliynyk, Anton O. Nagaoka, Akira Petryk, Suzanne Scarpulla, Michael A. Deshpande, Vikram V. Sparks, Taylor D. Enhancement in surface mobility and quantum transport of Bi(2−x)Sb(x)Te(3−y)Se(y) topological insulator by controlling the crystal growth conditions |
title | Enhancement in surface mobility and quantum transport of Bi(2−x)Sb(x)Te(3−y)Se(y) topological insulator by controlling the crystal growth conditions |
title_full | Enhancement in surface mobility and quantum transport of Bi(2−x)Sb(x)Te(3−y)Se(y) topological insulator by controlling the crystal growth conditions |
title_fullStr | Enhancement in surface mobility and quantum transport of Bi(2−x)Sb(x)Te(3−y)Se(y) topological insulator by controlling the crystal growth conditions |
title_full_unstemmed | Enhancement in surface mobility and quantum transport of Bi(2−x)Sb(x)Te(3−y)Se(y) topological insulator by controlling the crystal growth conditions |
title_short | Enhancement in surface mobility and quantum transport of Bi(2−x)Sb(x)Te(3−y)Se(y) topological insulator by controlling the crystal growth conditions |
title_sort | enhancement in surface mobility and quantum transport of bi(2−x)sb(x)te(3−y)se(y) topological insulator by controlling the crystal growth conditions |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6251917/ https://www.ncbi.nlm.nih.gov/pubmed/30470769 http://dx.doi.org/10.1038/s41598-018-35674-z |
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