Surface-Enhanced Raman Spectroscopy on Amorphous Semiconducting Rhodium Sulfide Microbowl Substrates

Exploring highly surface-enhanced Raman scattering (SERS)-active semiconductors is urgently required for practical applications. Here, with the guidance of theoretical calculations, amorphous rhodium sulfide microbowls with high enhancement factor (1 × 10(5)) and low limit of detection (10(−7) M) for rhodamine 6G are successfully developed. This remarkable sensitivity is attributed to quasi-resonance Raman effect and multiple light scattering. The first-principles calculations show that the energy gap of 4-nitrobenzenethiol adsorbed on Rh(3)S(6) is greatly decreased by shifting its lowest unoccupied molecular orbital (LUMO) energy level close to the LUMO of Rh(3)S(6), enabling quasi-resonance Raman effect by visible light. The finite-difference time-domain simulations demonstrate the efficient photon trapping ability enabled by multiple light scattering. The optimum wavelength of ∼633 nm for SERS is predicted in simulations and confirmed in experiments. Our results provide both a deep insight of the photo-driven charge transfer process and an important guidance for designing SERS-active semiconductors.