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Highly Sensitive Charge Sensor Based on Atom-Assisted High-Order Sideband Generation in a Hybrid Optomechanical System
Realizing highly sensitive charge sensors is of fundamental importance in physics, and may find applications in metrology, electronic tunnel imaging, and engineering technology. With the development of nanophotonics, cavity optomechanics with Coulomb interaction provides a powerful platform to explo...
Autores principales: | , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6263379/ https://www.ncbi.nlm.nih.gov/pubmed/30413116 http://dx.doi.org/10.3390/s18113833 |
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author | Liu, Zeng-Xing Xiong, Hao |
author_facet | Liu, Zeng-Xing Xiong, Hao |
author_sort | Liu, Zeng-Xing |
collection | PubMed |
description | Realizing highly sensitive charge sensors is of fundamental importance in physics, and may find applications in metrology, electronic tunnel imaging, and engineering technology. With the development of nanophotonics, cavity optomechanics with Coulomb interaction provides a powerful platform to explore new options for the precision measurement of charges. In this work, a method of realizing a highly sensitive charge sensor based on atom-assisted high-order sideband generation in a hybrid optomechanical system is proposed. The advantage of this scheme is that the sideband cutoff order and the charge number satisfy a monotonically increasing relationship, which is more sensitive than the atom-free case discussed previously. Calculations show that the sensitivity of the charge sensor in our scheme is improved by about 25 times. In particular, our proposed charge sensor can operate in low power conditions and extremely weak charge measurement environments. Furthermore, phase-dependent effects between the sideband generation and Coulomb interaction are also discussed in detail. Beyond their fundamental scientific significance, our work is an important step toward measuring individual charge. |
format | Online Article Text |
id | pubmed-6263379 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-62633792018-12-12 Highly Sensitive Charge Sensor Based on Atom-Assisted High-Order Sideband Generation in a Hybrid Optomechanical System Liu, Zeng-Xing Xiong, Hao Sensors (Basel) Article Realizing highly sensitive charge sensors is of fundamental importance in physics, and may find applications in metrology, electronic tunnel imaging, and engineering technology. With the development of nanophotonics, cavity optomechanics with Coulomb interaction provides a powerful platform to explore new options for the precision measurement of charges. In this work, a method of realizing a highly sensitive charge sensor based on atom-assisted high-order sideband generation in a hybrid optomechanical system is proposed. The advantage of this scheme is that the sideband cutoff order and the charge number satisfy a monotonically increasing relationship, which is more sensitive than the atom-free case discussed previously. Calculations show that the sensitivity of the charge sensor in our scheme is improved by about 25 times. In particular, our proposed charge sensor can operate in low power conditions and extremely weak charge measurement environments. Furthermore, phase-dependent effects between the sideband generation and Coulomb interaction are also discussed in detail. Beyond their fundamental scientific significance, our work is an important step toward measuring individual charge. MDPI 2018-11-08 /pmc/articles/PMC6263379/ /pubmed/30413116 http://dx.doi.org/10.3390/s18113833 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Liu, Zeng-Xing Xiong, Hao Highly Sensitive Charge Sensor Based on Atom-Assisted High-Order Sideband Generation in a Hybrid Optomechanical System |
title | Highly Sensitive Charge Sensor Based on Atom-Assisted High-Order Sideband Generation in a Hybrid Optomechanical System |
title_full | Highly Sensitive Charge Sensor Based on Atom-Assisted High-Order Sideband Generation in a Hybrid Optomechanical System |
title_fullStr | Highly Sensitive Charge Sensor Based on Atom-Assisted High-Order Sideband Generation in a Hybrid Optomechanical System |
title_full_unstemmed | Highly Sensitive Charge Sensor Based on Atom-Assisted High-Order Sideband Generation in a Hybrid Optomechanical System |
title_short | Highly Sensitive Charge Sensor Based on Atom-Assisted High-Order Sideband Generation in a Hybrid Optomechanical System |
title_sort | highly sensitive charge sensor based on atom-assisted high-order sideband generation in a hybrid optomechanical system |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6263379/ https://www.ncbi.nlm.nih.gov/pubmed/30413116 http://dx.doi.org/10.3390/s18113833 |
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