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Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators
We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as non...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2018
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6263913/ https://www.ncbi.nlm.nih.gov/pubmed/30400183 http://dx.doi.org/10.3390/s18113735 |