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Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition

We introduce a robust low-budget Kelvin probe design that is optimized for the long-term acquisition of surface photovoltage (SPV) data, especially developed for highly resistive systems, which exhibit—in contrast to conventional semiconductors—very slow photoinduced charge relaxation processes in t...

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Detalles Bibliográficos
Autores principales: Beyreuther, Elke, Grafström, Stefan, Eng, Lukas M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6264026/
https://www.ncbi.nlm.nih.gov/pubmed/30469394
http://dx.doi.org/10.3390/s18114068
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author Beyreuther, Elke
Grafström, Stefan
Eng, Lukas M.
author_facet Beyreuther, Elke
Grafström, Stefan
Eng, Lukas M.
author_sort Beyreuther, Elke
collection PubMed
description We introduce a robust low-budget Kelvin probe design that is optimized for the long-term acquisition of surface photovoltage (SPV) data, especially developed for highly resistive systems, which exhibit—in contrast to conventional semiconductors—very slow photoinduced charge relaxation processes in the range of hours and days. The device provides convenient optical access to the sample, as well as high mechanical and electrical stability due to off-resonance operation, showing a noise band as narrow as 1 mV. Furthermore, the acquisition of temperature-dependent SPV transients necessary for SPV-based deep-level transient spectroscopy becomes easily possible. The performance of the instrument is demonstrated by recording long-term SPV transients of the ultra-slowly relaxing model oxide strontium titanate (SrTiO [Formula: see text]) over 20 h.
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spelling pubmed-62640262018-12-12 Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition Beyreuther, Elke Grafström, Stefan Eng, Lukas M. Sensors (Basel) Article We introduce a robust low-budget Kelvin probe design that is optimized for the long-term acquisition of surface photovoltage (SPV) data, especially developed for highly resistive systems, which exhibit—in contrast to conventional semiconductors—very slow photoinduced charge relaxation processes in the range of hours and days. The device provides convenient optical access to the sample, as well as high mechanical and electrical stability due to off-resonance operation, showing a noise band as narrow as 1 mV. Furthermore, the acquisition of temperature-dependent SPV transients necessary for SPV-based deep-level transient spectroscopy becomes easily possible. The performance of the instrument is demonstrated by recording long-term SPV transients of the ultra-slowly relaxing model oxide strontium titanate (SrTiO [Formula: see text]) over 20 h. MDPI 2018-11-21 /pmc/articles/PMC6264026/ /pubmed/30469394 http://dx.doi.org/10.3390/s18114068 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Beyreuther, Elke
Grafström, Stefan
Eng, Lukas M.
Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition
title Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition
title_full Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition
title_fullStr Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition
title_full_unstemmed Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition
title_short Designing a Robust Kelvin Probe Setup Optimized for Long-Term Surface Photovoltage Acquisition
title_sort designing a robust kelvin probe setup optimized for long-term surface photovoltage acquisition
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6264026/
https://www.ncbi.nlm.nih.gov/pubmed/30469394
http://dx.doi.org/10.3390/s18114068
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