High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm C...

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Detalles Bibliográficos
Autores principales: Riverola, Martín, Torres, Francesc, Uranga, Arantxa, Barniol, Núria
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266664/
https://www.ncbi.nlm.nih.gov/pubmed/30405006
http://dx.doi.org/10.3390/mi9110579

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266664/
https://www.ncbi.nlm.nih.gov/pubmed/30405006
http://dx.doi.org/10.3390/mi9110579

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