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High Performance Seesaw Torsional CMOS-MEMS Relay Using Tungsten VIA Layer

In this paper, a seesaw torsional relay monolithically integrated in a standard 0.35 μm complementary metal oxide semiconductor (CMOS) technology is presented. The seesaw relay is fabricated using the Back-End-Of-Line (BEOL) layers available, specifically using the tungsten VIA3 layer of a 0.35 μm C...

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Detalles Bibliográficos
Autores principales:	Riverola, Martín, Torres, Francesc, Uranga, Arantxa, Barniol, Núria
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6266664/ https://www.ncbi.nlm.nih.gov/pubmed/30405006 http://dx.doi.org/10.3390/mi9110579

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