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Single-Walled Carbon-Nanotubes-Based Organic Memory Structures
The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fa...
Autores principales: | , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2016
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6273001/ https://www.ncbi.nlm.nih.gov/pubmed/27598112 http://dx.doi.org/10.3390/molecules21091166 |
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author | Fakher, Sundes Nejm, Razan Ayesh, Ahmad AL-Ghaferi, Amal Zeze, Dagou Mabrook, Mohammed |
author_facet | Fakher, Sundes Nejm, Razan Ayesh, Ahmad AL-Ghaferi, Amal Zeze, Dagou Mabrook, Mohammed |
author_sort | Fakher, Sundes |
collection | PubMed |
description | The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states. |
format | Online Article Text |
id | pubmed-6273001 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2016 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-62730012018-12-28 Single-Walled Carbon-Nanotubes-Based Organic Memory Structures Fakher, Sundes Nejm, Razan Ayesh, Ahmad AL-Ghaferi, Amal Zeze, Dagou Mabrook, Mohammed Molecules Article The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states. MDPI 2016-09-02 /pmc/articles/PMC6273001/ /pubmed/27598112 http://dx.doi.org/10.3390/molecules21091166 Text en © 2016 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Fakher, Sundes Nejm, Razan Ayesh, Ahmad AL-Ghaferi, Amal Zeze, Dagou Mabrook, Mohammed Single-Walled Carbon-Nanotubes-Based Organic Memory Structures |
title | Single-Walled Carbon-Nanotubes-Based Organic Memory Structures |
title_full | Single-Walled Carbon-Nanotubes-Based Organic Memory Structures |
title_fullStr | Single-Walled Carbon-Nanotubes-Based Organic Memory Structures |
title_full_unstemmed | Single-Walled Carbon-Nanotubes-Based Organic Memory Structures |
title_short | Single-Walled Carbon-Nanotubes-Based Organic Memory Structures |
title_sort | single-walled carbon-nanotubes-based organic memory structures |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6273001/ https://www.ncbi.nlm.nih.gov/pubmed/27598112 http://dx.doi.org/10.3390/molecules21091166 |
work_keys_str_mv | AT fakhersundes singlewalledcarbonnanotubesbasedorganicmemorystructures AT nejmrazan singlewalledcarbonnanotubesbasedorganicmemorystructures AT ayeshahmad singlewalledcarbonnanotubesbasedorganicmemorystructures AT alghaferiamal singlewalledcarbonnanotubesbasedorganicmemorystructures AT zezedagou singlewalledcarbonnanotubesbasedorganicmemorystructures AT mabrookmohammed singlewalledcarbonnanotubesbasedorganicmemorystructures |