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Single-Walled Carbon-Nanotubes-Based Organic Memory Structures

The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fa...

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Autores principales: Fakher, Sundes, Nejm, Razan, Ayesh, Ahmad, AL-Ghaferi, Amal, Zeze, Dagou, Mabrook, Mohammed
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2016
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6273001/
https://www.ncbi.nlm.nih.gov/pubmed/27598112
http://dx.doi.org/10.3390/molecules21091166
_version_ 1783377283896049664
author Fakher, Sundes
Nejm, Razan
Ayesh, Ahmad
AL-Ghaferi, Amal
Zeze, Dagou
Mabrook, Mohammed
author_facet Fakher, Sundes
Nejm, Razan
Ayesh, Ahmad
AL-Ghaferi, Amal
Zeze, Dagou
Mabrook, Mohammed
author_sort Fakher, Sundes
collection PubMed
description The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states.
format Online
Article
Text
id pubmed-6273001
institution National Center for Biotechnology Information
language English
publishDate 2016
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-62730012018-12-28 Single-Walled Carbon-Nanotubes-Based Organic Memory Structures Fakher, Sundes Nejm, Razan Ayesh, Ahmad AL-Ghaferi, Amal Zeze, Dagou Mabrook, Mohammed Molecules Article The electrical behaviour of organic memory structures, based on single-walled carbon-nanotubes (SWCNTs), metal–insulator–semiconductor (MIS) and thin film transistor (TFT) structures, using poly(methyl methacrylate) (PMMA) as the gate dielectric, are reported. The drain and source electrodes were fabricated by evaporating 50 nm gold, and the gate electrode was made from 50 nm-evaporated aluminium on a clean glass substrate. Thin films of SWCNTs, embedded within the insulating layer, were used as the floating gate. SWCNTs-based memory devices exhibited clear hysteresis in their electrical characteristics (capacitance–voltage (C–V) for MIS structures, as well as output and transfer characteristics for transistors). Both structures were shown to produce reliable and large memory windows by virtue of high capacity and reduced charge leakage. The hysteresis in the output and transfer characteristics, the shifts in the threshold voltage of the transfer characteristics, and the flat-band voltage shift in the MIS structures were attributed to the charging and discharging of the SWCNTs floating gate. Under an appropriate gate bias (1 s pulses), the floating gate is charged and discharged, resulting in significant threshold voltage shifts. Pulses as low as 1 V resulted in clear write and erase states. MDPI 2016-09-02 /pmc/articles/PMC6273001/ /pubmed/27598112 http://dx.doi.org/10.3390/molecules21091166 Text en © 2016 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC-BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Fakher, Sundes
Nejm, Razan
Ayesh, Ahmad
AL-Ghaferi, Amal
Zeze, Dagou
Mabrook, Mohammed
Single-Walled Carbon-Nanotubes-Based Organic Memory Structures
title Single-Walled Carbon-Nanotubes-Based Organic Memory Structures
title_full Single-Walled Carbon-Nanotubes-Based Organic Memory Structures
title_fullStr Single-Walled Carbon-Nanotubes-Based Organic Memory Structures
title_full_unstemmed Single-Walled Carbon-Nanotubes-Based Organic Memory Structures
title_short Single-Walled Carbon-Nanotubes-Based Organic Memory Structures
title_sort single-walled carbon-nanotubes-based organic memory structures
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6273001/
https://www.ncbi.nlm.nih.gov/pubmed/27598112
http://dx.doi.org/10.3390/molecules21091166
work_keys_str_mv AT fakhersundes singlewalledcarbonnanotubesbasedorganicmemorystructures
AT nejmrazan singlewalledcarbonnanotubesbasedorganicmemorystructures
AT ayeshahmad singlewalledcarbonnanotubesbasedorganicmemorystructures
AT alghaferiamal singlewalledcarbonnanotubesbasedorganicmemorystructures
AT zezedagou singlewalledcarbonnanotubesbasedorganicmemorystructures
AT mabrookmohammed singlewalledcarbonnanotubesbasedorganicmemorystructures