Cargando…
Towards manufacturing high uniformity polysilicon circuits through TFT contact barrier engineering
The predicted 50 billion devices connected to the Internet of Things by 2020 has renewed interest in polysilicon technology for high performance new sensing and control circuits, in addition to traditional display usage. Yet, the polycrystalline nature of the material presents significant challenges...
Autores principales: | Sporea, Radu A., Wheeler, Luke J., Stolojan, Vlad, Silva, S. Ravi P. |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6277386/ https://www.ncbi.nlm.nih.gov/pubmed/30510271 http://dx.doi.org/10.1038/s41598-018-35577-z |
Ejemplares similares
-
Self-Heating Effects In Polysilicon Source Gated Transistors
por: Sporea, R. A., et al.
Publicado: (2015) -
Utilization of Waste Polysilicon Sludge in Concrete
por: Qudoos, Abdul, et al.
Publicado: (2020) -
Landau-Ginzburg Realization of Open String TFT
por: Brunner, I, et al.
Publicado: (2003) -
Optical Temperature Sensor Based on Polysilicon Waveguides
por: Xu, Xinru, et al.
Publicado: (2022) -
Optical Indoor Positioning System Based on TFT Technology
por: Gőzse, István
Publicado: (2015)