Cargando…
Silicon germanium photo-blocking layers for a-IGZO based industrial display
Amorphous indium- gallium-zinc oxide (a-IGZO) has been intensively studied for the application to active matrix flat-panel display because of its superior electrical and optical properties. However, the characteristics of a-IGZO were found to be very sensitive to external circumstance such as light...
Autores principales: | Kang, Su Hyoung, Kang, Sangmin, Park, Seong Chae, Park, Jong Bo, Jung, Youngjin, Hong, Byung Hee |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6277433/ https://www.ncbi.nlm.nih.gov/pubmed/30510247 http://dx.doi.org/10.1038/s41598-018-35222-9 |
Ejemplares similares
-
Development of the α-IGZO/Ag/α-IGZO Triple-Layer Structure Films for the Application of Transparent Electrode
por: Chen, Kun-Neng, et al.
Publicado: (2017) -
Germanium epitaxy on silicon
por: Ye, Hui, et al.
Publicado: (2014) -
Physics and technology of crystalline oxide semiconductor CAAC-IGZO: application to displays
por: Yamazaki, Shunpei, et al.
Publicado: (2016) -
Crystallization of Electrodeposited Germanium Thin Film on Silicon (100)
por: Abidin, Mastura Shafinaz Zainal, et al.
Publicado: (2013) -
Germanium silicon: physics and materials
por: Willardson, R K, et al.
Publicado: (1998)