Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations

The effect of thermal treatment and annealing under different temperatures from 100 °C to 250 °C on the photoluminescence spectroscopy of the GeSe ultrathin slab is reported. After the thermal treatment and annealing under 200 °C, we found that the photoluminescence intensity of A exciton and B exci...

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Autores principales: Mao, Yuliang, Mao, Xin, Zhao, Hongquan, Zhang, Nandi, Shi, Xuan, Yuan, Jianmei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6281588/
https://www.ncbi.nlm.nih.gov/pubmed/30518852
http://dx.doi.org/10.1038/s41598-018-36068-x
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author Mao, Yuliang
Mao, Xin
Zhao, Hongquan
Zhang, Nandi
Shi, Xuan
Yuan, Jianmei
author_facet Mao, Yuliang
Mao, Xin
Zhao, Hongquan
Zhang, Nandi
Shi, Xuan
Yuan, Jianmei
author_sort Mao, Yuliang
collection PubMed
description The effect of thermal treatment and annealing under different temperatures from 100 °C to 250 °C on the photoluminescence spectroscopy of the GeSe ultrathin slab is reported. After the thermal treatment and annealing under 200 °C, we found that the photoluminescence intensity of A exciton and B exciton in GeSe ultrathin slab is increased to twice as much as that in untreated case, while is increased by ~84% in the photoluminescence intensity of C exciton. Combined by our experimental work and theoretical simulations, our study confirms the significant role of thermal treatments and annealing in reducing surface roughness and removing the Se vacancy to form more compact and smoother regions in GeSe ultrathin slab. Our findings imply that the improved quality of GeSe surface after thermal treatments is an important factor for the photoluminescence enhancement.
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spelling pubmed-62815882018-12-07 Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations Mao, Yuliang Mao, Xin Zhao, Hongquan Zhang, Nandi Shi, Xuan Yuan, Jianmei Sci Rep Article The effect of thermal treatment and annealing under different temperatures from 100 °C to 250 °C on the photoluminescence spectroscopy of the GeSe ultrathin slab is reported. After the thermal treatment and annealing under 200 °C, we found that the photoluminescence intensity of A exciton and B exciton in GeSe ultrathin slab is increased to twice as much as that in untreated case, while is increased by ~84% in the photoluminescence intensity of C exciton. Combined by our experimental work and theoretical simulations, our study confirms the significant role of thermal treatments and annealing in reducing surface roughness and removing the Se vacancy to form more compact and smoother regions in GeSe ultrathin slab. Our findings imply that the improved quality of GeSe surface after thermal treatments is an important factor for the photoluminescence enhancement. Nature Publishing Group UK 2018-12-05 /pmc/articles/PMC6281588/ /pubmed/30518852 http://dx.doi.org/10.1038/s41598-018-36068-x Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Mao, Yuliang
Mao, Xin
Zhao, Hongquan
Zhang, Nandi
Shi, Xuan
Yuan, Jianmei
Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
title Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
title_full Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
title_fullStr Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
title_full_unstemmed Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
title_short Enhancement of photoluminescence efficiency in GeSe ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
title_sort enhancement of photoluminescence efficiency in gese ultrathin slab by thermal treatment and annealing: experiment and first-principles molecular dynamics simulations
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6281588/
https://www.ncbi.nlm.nih.gov/pubmed/30518852
http://dx.doi.org/10.1038/s41598-018-36068-x
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