Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors

Lateral graphene p–n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation of lateral graphene p–n junctions with a controllable doping levels is still a great challenge due to the monolayer feature of graphene. Herein, by p...

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Detalles Bibliográficos
Autores principales: Wang, Gang, Zhang, Miao, Chen, Da, Guo, Qinglei, Feng, Xuefei, Niu, Tianchao, Liu, Xiaosong, Li, Ang, Lai, Jiawei, Sun, Dong, Liao, Zhimin, Wang, Yongqiang, Chu, Paul K., Ding, Guqiao, Xie, Xiaoming, Di, Zengfeng, Wang, Xi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6281711/
https://www.ncbi.nlm.nih.gov/pubmed/30518867
http://dx.doi.org/10.1038/s41467-018-07555-6

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