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Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide

A dielectric anomaly induced by doping has been observed at about 340 K in chlorine-doped diisopropylammonium bromide. The dielectric anomaly has a switchable behaviour, which indicates potential applications on switches and sensors. Temperature-dependent Raman spectrum, X-ray diffraction and differ...

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Detalles Bibliográficos
Autores principales: Gao, Kaige, Zhang, Binbin, Cao, Yunqing, Chen, Xiaobing
Formato: Online Artículo Texto
Lenguaje:English
Publicado: The Royal Society 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6281938/
https://www.ncbi.nlm.nih.gov/pubmed/30564423
http://dx.doi.org/10.1098/rsos.181397
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author Gao, Kaige
Zhang, Binbin
Cao, Yunqing
Chen, Xiaobing
author_facet Gao, Kaige
Zhang, Binbin
Cao, Yunqing
Chen, Xiaobing
author_sort Gao, Kaige
collection PubMed
description A dielectric anomaly induced by doping has been observed at about 340 K in chlorine-doped diisopropylammonium bromide. The dielectric anomaly has a switchable behaviour, which indicates potential applications on switches and sensors. Temperature-dependent Raman spectrum, X-ray diffraction and differential scanning calorimetry do not show any anomaly around the dielectric anomaly temperature, which prove that the dielectric anomaly does not come from structure phase transition and has no specific heat variety. It is assumed that this dielectric anomaly can be attributed to the freezing of ferroelectric domain walls induced by the pinning of point defects.
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spelling pubmed-62819382018-12-18 Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide Gao, Kaige Zhang, Binbin Cao, Yunqing Chen, Xiaobing R Soc Open Sci Chemistry A dielectric anomaly induced by doping has been observed at about 340 K in chlorine-doped diisopropylammonium bromide. The dielectric anomaly has a switchable behaviour, which indicates potential applications on switches and sensors. Temperature-dependent Raman spectrum, X-ray diffraction and differential scanning calorimetry do not show any anomaly around the dielectric anomaly temperature, which prove that the dielectric anomaly does not come from structure phase transition and has no specific heat variety. It is assumed that this dielectric anomaly can be attributed to the freezing of ferroelectric domain walls induced by the pinning of point defects. The Royal Society 2018-11-28 /pmc/articles/PMC6281938/ /pubmed/30564423 http://dx.doi.org/10.1098/rsos.181397 Text en © 2018 The Authors. http://creativecommons.org/licenses/by/4.0/ Published by the Royal Society under the terms of the Creative Commons Attribution License http://creativecommons.org/licenses/by/4.0/, which permits unrestricted use, provided the original author and source are credited.
spellingShingle Chemistry
Gao, Kaige
Zhang, Binbin
Cao, Yunqing
Chen, Xiaobing
Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide
title Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide
title_full Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide
title_fullStr Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide
title_full_unstemmed Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide
title_short Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide
title_sort doping induced dielectric anomaly below the curie temperature in molecular ferroelectric diisopropylammonium bromide
topic Chemistry
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6281938/
https://www.ncbi.nlm.nih.gov/pubmed/30564423
http://dx.doi.org/10.1098/rsos.181397
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AT caoyunqing dopinginduceddielectricanomalybelowthecurietemperatureinmolecularferroelectricdiisopropylammoniumbromide
AT chenxiaobing dopinginduceddielectricanomalybelowthecurietemperatureinmolecularferroelectricdiisopropylammoniumbromide