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Electron aspirator using electron–electron scattering in nanoscale silicon
Current enhancement without increasing the input power is a critical issue to be pursued for electronic circuits. However, drivability of metal-oxide-semiconductor (MOS) transistors is limited by the source-injection current, and electrons that have passed through the source unavoidably waste their...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6297221/ https://www.ncbi.nlm.nih.gov/pubmed/30559340 http://dx.doi.org/10.1038/s41467-018-07278-8 |
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author | Firdaus, Himma Watanabe, Tokinobu Hori, Masahiro Moraru, Daniel Takahashi, Yasuo Fujiwara, Akira Ono, Yukinori |
author_facet | Firdaus, Himma Watanabe, Tokinobu Hori, Masahiro Moraru, Daniel Takahashi, Yasuo Fujiwara, Akira Ono, Yukinori |
author_sort | Firdaus, Himma |
collection | PubMed |
description | Current enhancement without increasing the input power is a critical issue to be pursued for electronic circuits. However, drivability of metal-oxide-semiconductor (MOS) transistors is limited by the source-injection current, and electrons that have passed through the source unavoidably waste their momentum to the phonon bath. Here, we propose the Si electron-aspirator, a nanometer-scaled MOS device with a T-shaped branch, to go beyond this limit. The device utilizes the hydrodynamic nature of electrons due to the electron–electron scattering, by which the injected hot electrons transfer their momentum to cold electrons before they relax with the phonon bath. This momentum transfer induces an electron flow from the grounded side terminal without additional power sources. The operation is demonstrated by observing the output-current enhancement by a factor of about 3 at 8 K, which reveals that the electron–electron scattering can govern the electron transport in nanometer-scaled MOS devices, and increase their effective drivability. |
format | Online Article Text |
id | pubmed-6297221 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | Nature Publishing Group UK |
record_format | MEDLINE/PubMed |
spelling | pubmed-62972212018-12-19 Electron aspirator using electron–electron scattering in nanoscale silicon Firdaus, Himma Watanabe, Tokinobu Hori, Masahiro Moraru, Daniel Takahashi, Yasuo Fujiwara, Akira Ono, Yukinori Nat Commun Article Current enhancement without increasing the input power is a critical issue to be pursued for electronic circuits. However, drivability of metal-oxide-semiconductor (MOS) transistors is limited by the source-injection current, and electrons that have passed through the source unavoidably waste their momentum to the phonon bath. Here, we propose the Si electron-aspirator, a nanometer-scaled MOS device with a T-shaped branch, to go beyond this limit. The device utilizes the hydrodynamic nature of electrons due to the electron–electron scattering, by which the injected hot electrons transfer their momentum to cold electrons before they relax with the phonon bath. This momentum transfer induces an electron flow from the grounded side terminal without additional power sources. The operation is demonstrated by observing the output-current enhancement by a factor of about 3 at 8 K, which reveals that the electron–electron scattering can govern the electron transport in nanometer-scaled MOS devices, and increase their effective drivability. Nature Publishing Group UK 2018-12-17 /pmc/articles/PMC6297221/ /pubmed/30559340 http://dx.doi.org/10.1038/s41467-018-07278-8 Text en © The Author(s) 2018 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/. |
spellingShingle | Article Firdaus, Himma Watanabe, Tokinobu Hori, Masahiro Moraru, Daniel Takahashi, Yasuo Fujiwara, Akira Ono, Yukinori Electron aspirator using electron–electron scattering in nanoscale silicon |
title | Electron aspirator using electron–electron scattering in nanoscale silicon |
title_full | Electron aspirator using electron–electron scattering in nanoscale silicon |
title_fullStr | Electron aspirator using electron–electron scattering in nanoscale silicon |
title_full_unstemmed | Electron aspirator using electron–electron scattering in nanoscale silicon |
title_short | Electron aspirator using electron–electron scattering in nanoscale silicon |
title_sort | electron aspirator using electron–electron scattering in nanoscale silicon |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6297221/ https://www.ncbi.nlm.nih.gov/pubmed/30559340 http://dx.doi.org/10.1038/s41467-018-07278-8 |
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