Electron aspirator using electron–electron scattering in nanoscale silicon

Current enhancement without increasing the input power is a critical issue to be pursued for electronic circuits. However, drivability of metal-oxide-semiconductor (MOS) transistors is limited by the source-injection current, and electrons that have passed through the source unavoidably waste their...

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Detalles Bibliográficos
Autores principales: Firdaus, Himma, Watanabe, Tokinobu, Hori, Masahiro, Moraru, Daniel, Takahashi, Yasuo, Fujiwara, Akira, Ono, Yukinori
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6297221/
https://www.ncbi.nlm.nih.gov/pubmed/30559340
http://dx.doi.org/10.1038/s41467-018-07278-8

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6297221/
https://www.ncbi.nlm.nih.gov/pubmed/30559340
http://dx.doi.org/10.1038/s41467-018-07278-8

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