Cargando…
Electron aspirator using electron–electron scattering in nanoscale silicon
Current enhancement without increasing the input power is a critical issue to be pursued for electronic circuits. However, drivability of metal-oxide-semiconductor (MOS) transistors is limited by the source-injection current, and electrons that have passed through the source unavoidably waste their...
Autores principales: | Firdaus, Himma, Watanabe, Tokinobu, Hori, Masahiro, Moraru, Daniel, Takahashi, Yasuo, Fujiwara, Akira, Ono, Yukinori |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6297221/ https://www.ncbi.nlm.nih.gov/pubmed/30559340 http://dx.doi.org/10.1038/s41467-018-07278-8 |
Ejemplares similares
-
Gigahertz single-trap electron pumps in silicon
por: Yamahata, Gento, et al.
Publicado: (2014) -
Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements
por: Radamson, Henry, et al.
Publicado: (2014) -
Neutrino-Electron scattering and the weak charge of the electron
por: Fritzsch, Harald
Publicado: (1978) -
Physics at the nanoscale: from imaging to electronics
por: Joachim, C
Publicado: (1997) -
Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon
por: Sieradzki, A., et al.
Publicado: (2013)