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Hyperspectral and Color Imaging of Solvent Vapor Sorption Into Porous Silicon

A porous silicon thin film photonic crystal (rugate) sample with both a radial gradient in the rugate reflectance band wavelength and two spatially separated pore-wall surface chemistries (methylated and oxidized) was monitored by hyperspectral and color imaging while it was dosed with vapors of ace...

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Detalles Bibliográficos
Autores principales: Chun, Soohyun, Miskelly, Gordon M.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Frontiers Media S.A. 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6298527/
https://www.ncbi.nlm.nih.gov/pubmed/30619819
http://dx.doi.org/10.3389/fchem.2018.00610
Descripción
Sumario:A porous silicon thin film photonic crystal (rugate) sample with both a radial gradient in the rugate reflectance band wavelength and two spatially separated pore-wall surface chemistries (methylated and oxidized) was monitored by hyperspectral and color imaging while it was dosed with vapors of acetone, ethanol, heptane, 2-propanol, and toluene at concentrations ranging from 100 to 3,000 mg m(−3). The shift in the wavelength of the rugate reflectance band maximum at each position along a transect across the two surface chemistries, as derived from the hyperspectral imaging, could discriminate between the different solvents and concentrations of solvents, while the change in hue derived from the color camera data along an analogous transect did not provide discrimination. The discrimination between solvents was mainly due to the two different surface chemistries, and the gradient associated with the change in the rugate reflectance band wavelength did not affect the selectivity significantly. There was spatial variability in the spectral and color responses along the transect independent of the overall rugate reflectance band wavelength gradient and pore-wall surface chemistries, and this was attributed to factors such as the presence of striations in the silicon wafer from which the porous silicon was prepared.