Chemistry of resistivity changes in TiTe/Al(2)O(3) conductive-bridge memories

We report the chemical phenomena involved in the reverse forming (negative bias on top electrode) and reset of a TaN/TiTe/Al(2)O(3)/Ta memory stack. Hard X-ray photoelectron spectroscopy was used to conduct a non-destructive investigation of the critical interfaces between the electrolyte (Al(2)O(3)...

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Detalles Bibliográficos
Autores principales: Kazar Mendes, M., Martinez, E., Ablett, J. M., Veillerot, M., Gassilloud, R., Bernard, M., Renault, O., Rueff, J. P., Barrett, N.
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6298955/
https://www.ncbi.nlm.nih.gov/pubmed/30560863
http://dx.doi.org/10.1038/s41598-018-36131-7

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6298955/
https://www.ncbi.nlm.nih.gov/pubmed/30560863
http://dx.doi.org/10.1038/s41598-018-36131-7

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