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4,5‐Diazafluorene‐Based Donor–Acceptor Small Molecules as Charge Trapping Elements for Tunable Nonvolatile Organic Transistor Memory

Three diazafluorene derivatives triphenylamine (TPA)(PDAF)(n) (n = 1, 2, 3) serving as small molecular elements are designed and synthesized via concentrated sulfuric acid mediated Friedel–Crafts reaction. With highly nonplanar topological configuration, TPA(PDAF)(3) shows weaker intermolecular inte...

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Detalles Bibliográficos
Autores principales: Yu, Yang, Bian, Lin‐Yi, Chen, Jian‐Guo, Ma, Qi‐Hao, Li, Yin‐Xiang, Ling, Hai‐Feng, Feng, Quan‐You, Xie, Ling‐Hai, Yi, Ming‐Dong, Huang, Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: John Wiley and Sons Inc. 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6299726/
https://www.ncbi.nlm.nih.gov/pubmed/30581695
http://dx.doi.org/10.1002/advs.201800747
Descripción
Sumario:Three diazafluorene derivatives triphenylamine (TPA)(PDAF)(n) (n = 1, 2, 3) serving as small molecular elements are designed and synthesized via concentrated sulfuric acid mediated Friedel–Crafts reaction. With highly nonplanar topological configuration, TPA(PDAF)(3) shows weaker intermolecular interaction in the solid states and thus exhibits single nanomolecular behavior, which is crucial for charge stored and retained in an organic field‐effect transistor (OFET) memory device. Furthermore, diazafluorene derivatives possess a completely separate highest occupied molecular orbital/lowest unoccupied molecular orbital, which offers ideal hole and electron trapping sites. As charge storage elements, triphenylamine groups provide the hole trapping sites, while diazafluorene units provide the electron trapping sites and act as a hole blocking group to restrain the leakage of stored holes trapped in triphenylamine. The pentacene‐based OFET memory device with solution‐processing TPA(PDAF)(3) shows a good hole‐trapping ability, high hole trapping density (4.55 × 10(12) cm(−2)), fast trapping speed (<20 ms), a large memory window (89 V), and a tunable ambipolar memory behavior. The optimized device shows a large ON/OFF current ratio (2.85 × 10(7)), good charge retention (>10(4) s), and reliable endurance properties. This study suggests that diazafluorene based donor–acceptor small molecular elements have great promise for high‐performance OFET memory.