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Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires †
In this paper, the torsional stress effect on Giant Magneto-Impedance (GMI) was studied in Co-rich amorphous wires. The study, which was conducted in the context of the development of a current clamp based on GMI, considered torsion as a parameter of the influence of this sensor. Both diagonal, Z(11...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6308677/ https://www.ncbi.nlm.nih.gov/pubmed/30477226 http://dx.doi.org/10.3390/s18124121 |
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author | Nabias, Julie Asfour, Aktham Yonnet, Jean-Paul |
author_facet | Nabias, Julie Asfour, Aktham Yonnet, Jean-Paul |
author_sort | Nabias, Julie |
collection | PubMed |
description | In this paper, the torsional stress effect on Giant Magneto-Impedance (GMI) was studied in Co-rich amorphous wires. The study, which was conducted in the context of the development of a current clamp based on GMI, considered torsion as a parameter of the influence of this sensor. Both diagonal, Z(11), and off-diagonal, Z(21), components of the impedance tensor were investigated. The samples were Co-rich wires with a 100 µ diameter. The wires were twisted positive and negative angles with respect to a reference position. For each component of the impedance, the intrinsic sensitivity and offset were measured as a function of the rotation angle. The results showed that the sensitivity of the diagonal component at a given working point slightly increased for angles between −90° to +90°, whereas the sensitivity was almost constant for the off-diagonal component at zero-field. The intrinsic offset in the diagonal configuration was almost unchanged for the rotation angles considered, whereas this offset increased in the off-diagonal configuration. Furthermore, the GMI ratio of Z(11) was also measured as a function of the rotation angle for comparison purposes with known data. The maximum of this ratio was obtained for a rotation angle of about 50°. |
format | Online Article Text |
id | pubmed-6308677 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2018 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-63086772019-01-04 Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires † Nabias, Julie Asfour, Aktham Yonnet, Jean-Paul Sensors (Basel) Article In this paper, the torsional stress effect on Giant Magneto-Impedance (GMI) was studied in Co-rich amorphous wires. The study, which was conducted in the context of the development of a current clamp based on GMI, considered torsion as a parameter of the influence of this sensor. Both diagonal, Z(11), and off-diagonal, Z(21), components of the impedance tensor were investigated. The samples were Co-rich wires with a 100 µ diameter. The wires were twisted positive and negative angles with respect to a reference position. For each component of the impedance, the intrinsic sensitivity and offset were measured as a function of the rotation angle. The results showed that the sensitivity of the diagonal component at a given working point slightly increased for angles between −90° to +90°, whereas the sensitivity was almost constant for the off-diagonal component at zero-field. The intrinsic offset in the diagonal configuration was almost unchanged for the rotation angles considered, whereas this offset increased in the off-diagonal configuration. Furthermore, the GMI ratio of Z(11) was also measured as a function of the rotation angle for comparison purposes with known data. The maximum of this ratio was obtained for a rotation angle of about 50°. MDPI 2018-11-24 /pmc/articles/PMC6308677/ /pubmed/30477226 http://dx.doi.org/10.3390/s18124121 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Nabias, Julie Asfour, Aktham Yonnet, Jean-Paul Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires † |
title | Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires † |
title_full | Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires † |
title_fullStr | Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires † |
title_full_unstemmed | Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires † |
title_short | Effect of Torsion Stress on the Offset and Sensitivity of Diagonal and Off-Diagonal GMI in Amorphous Wires † |
title_sort | effect of torsion stress on the offset and sensitivity of diagonal and off-diagonal gmi in amorphous wires † |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6308677/ https://www.ncbi.nlm.nih.gov/pubmed/30477226 http://dx.doi.org/10.3390/s18124121 |
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