Cargando…

A Theoretical Study of Surface Mode Propagation with a Guiding Layer of GaN/Sapphire Hetero-Structure in Liquid Medium

Gallium Nitride (GaN) is considered as the second most popular semiconductor material in industry after silicon. This is due to its wide applications encompassing Light Emitting Diode (LED) and power electronics. In addition, its piezoelectric properties are fascinating to be explored as electromech...

Descripción completa

Detalles Bibliográficos
Autores principales:	Mohd Razip Wee, M. F., Jaafar, Muhammad Musoddiq, Faiz, Mohd Syafiq, Dee, Chang Fu, Yeop Majlis, Burhanuddin
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Communication
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315700/ https://www.ncbi.nlm.nih.gov/pubmed/30563159 http://dx.doi.org/10.3390/bios8040124

Ejemplares similares

Surface Acoustic Wave Propagation of GaN/Sapphire Integrated with a Gold Guiding Layer
por: Jaafar, Muhammad Musoddiq, et al.
Publicado: (2023)

Gate Length Variation Effect on Performance of Gate-First Self-Aligned In(0.53)Ga(0.47)As MOSFET
por: Mohd Razip Wee, Mohd F., et al.
Publicado: (2013)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
por: Badokas, Kazimieras, et al.
Publicado: (2022)

A Tapered Aluminium Microelectrode Array for Improvement of Dielectrophoresis-Based Particle Manipulation
por: Buyong, Muhamad Ramdzan, et al.
Publicado: (2015)

Surface Modification of Electroosmotic Silicon Microchannel Using Thermal Dry Oxidation
por: Tuan Yaakub, Tuan Norjihan, et al.
Publicado: (2018)

Electrical transportation mechanisms of molybdenum disulfide flakes-graphene quantum dots heterostructure embedded in polyvinylidene fluoride polymer
por: Ooi, Poh Choon, et al.
Publicado: (2019)

Nanoscratch Characterization of GaN Epilayers on c- and a-Axis Sapphire Substrates
por: Lin, Meng-Hung, et al.
Publicado: (2010)

Kinetics of Guided Growth of Horizontal GaN Nanowires on Flat and Faceted Sapphire Surfaces
por: Rothman, Amnon, et al.
Publicado: (2021)

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
por: Su, Zhaole, et al.
Publicado: (2022)

Overgrowth and strain investigation of (11–20) non-polar GaN on patterned templates on sapphire
por: Jiu, L., et al.
Publicado: (2018)

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
por: Tsykaniuk, Bogdan I., et al.
Publicado: (2017)

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
por: Wu, Jinxing, et al.
Publicado: (2020)

Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates
por: Li, Pengkun, et al.
Publicado: (2020)

Novel patterned sapphire substrates for enhancing the efficiency of GaN-based light-emitting diodes
por: Chao, Szu-Han, et al.
Publicado: (2020)

In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD
por: Rosová, Alica, et al.
Publicado: (2022)

The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates
por: Jue, Miyeon, et al.
Publicado: (2015)

Erratum to: Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire
por: Tsykaniuk, Bogdan I., et al.
Publicado: (2017)

Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers
por: Gao, Yuan, et al.
Publicado: (2020)

Experimental dataset of nanoporous GaN photoelectrode supported on patterned sapphire substrates for photoelectrochemical water splitting
por: Li, Dongjing, et al.
Publicado: (2019)

Effective Chemical Lift-Off for Air-Tunnel GaN on a Trapezoid-Patterned Sapphire Substrate
por: Ahn, Min-joo, et al.
Publicado: (2023)

Large-Area MoS(2) Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
por: Španková, Marianna, et al.
Publicado: (2023)

Exploiting the Oxygen Inhibitory Effect on UV Curing in Microfabrication: A Modified Lithography Technique
por: Alvankarian, Jafar, et al.
Publicado: (2015)

Tunable Microfluidic Devices for Hydrodynamic Fractionation of Cells and Beads: A Review
por: Alvankarian, Jafar, et al.
Publicado: (2015)

A Review of MEMS Capacitive Microphones
por: Zawawi, Siti Aisyah, et al.
Publicado: (2020)

The Fabrication and Indentation of Cubic Silicon Carbide Diaphragm for Acoustic Sensing
por: Zawawi, Siti Aisyah, et al.
Publicado: (2021)

Crystal Quality and Light Output Power of GaN-Based LEDs Grown on Concave Patterned Sapphire Substrate
por: Wu, YewChung Sermon, et al.
Publicado: (2015)

Fabrication of 2-Inch Free-Standing GaN Substrate on Sapphire With a Combined Buffer Layer by HVPE
por: Liu, Nanliu, et al.
Publicado: (2021)

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
por: Shih, Huan-Yu, et al.
Publicado: (2015)

The Design, Fabrication, and Testing of an Electromagnetic Micropump with a Matrix-Patterned Magnetic Polymer Composite Actuator Membrane
por: Mohd Said, Muzalifah, et al.
Publicado: (2017)

Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor
por: Sihar, Nabihah, et al.
Publicado: (2018)

Strong Geometrical Effects in Submillimeter Selective Area Growth and Light Extraction of GaN Light Emitting Diodes on Sapphire
por: Tanaka, Atsunori, et al.
Publicado: (2015)

Electronic states of deep trap levels in a-plane GaN templates grown on r-plane sapphire by HVPE
por: Lee, Moonsang, et al.
Publicado: (2018)

Three-Dimensional Finite Element Method Simulation of Perforated Graphene Nano-Electro-Mechanical (NEM) Switches
por: Zulkefli, Mohd Amir, et al.
Publicado: (2017)

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
por: Abid, Idriss, et al.
Publicado: (2019)

Manipulation of Photoelectrochemical Water Splitting by Controlling Direction of Carrier Movement Using InGaN/GaN Hetero-Structure Nanowires
por: Noh, Siyun, et al.
Publicado: (2023)

Study of p-SiC/n-GaN Hetero-Structural Double-Drift Region IMPATT Diode
por: Dai, Yang, et al.
Publicado: (2021)

Developing Conductive Highly Ordered Zinc Oxide Nanorods by Acetylacetonate-Assisted Growth
por: A Karim, Siti Shafura, et al.
Publicado: (2020)

Highly polarized photoluminescence from c-plane InGaN/GaN multiple quantum wells on stripe-shaped cavity-engineered sapphire substrate
por: Kim, Jongmyeong, et al.
Publicado: (2019)

Performance enhancement of GaN-based light emitting diodes by transfer from sapphire to silicon substrate using double-transfer technique
por: Zhang, Jiang-Yong, et al.
Publicado: (2012)

Spatially resolved and orientation dependent Raman mapping of epitaxial lateral overgrowth nonpolar a-plane GaN on r-plane sapphire
por: Jiang, Teng, et al.
Publicado: (2016)

Cannot write session to /tmp/vufind_sessions/sess_4cdvv9qgl5lqmeoos54eig4emj