Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for c...

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Detalles Bibliográficos
Autores principales: Huang, Yifei, Wang, Ying, Kuang, Xiaofei, Wang, Wenju, Tang, Jianxiang, Sun, Youlei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315798/
https://www.ncbi.nlm.nih.gov/pubmed/30469458
http://dx.doi.org/10.3390/mi9120610
Descripción
Sumario:In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 10(12) cm(−2) to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 10(12) cm(−2) to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.

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