Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges

In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for c...

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Autores principales: Huang, Yifei, Wang, Ying, Kuang, Xiaofei, Wang, Wenju, Tang, Jianxiang, Sun, Youlei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315798/
https://www.ncbi.nlm.nih.gov/pubmed/30469458
http://dx.doi.org/10.3390/mi9120610
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author Huang, Yifei
Wang, Ying
Kuang, Xiaofei
Wang, Wenju
Tang, Jianxiang
Sun, Youlei
author_facet Huang, Yifei
Wang, Ying
Kuang, Xiaofei
Wang, Wenju
Tang, Jianxiang
Sun, Youlei
author_sort Huang, Yifei
collection PubMed
description In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 10(12) cm(−2) to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 10(12) cm(−2) to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved.
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spelling pubmed-63157982019-01-10 Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges Huang, Yifei Wang, Ying Kuang, Xiaofei Wang, Wenju Tang, Jianxiang Sun, Youlei Micromachines (Basel) Article In this paper, an edge termination structure, referred to as step-double-zone junction termination extension (Step-DZ-JTE), is proposed. Step-DZ-JTE further improves the distribution of the electric field (EF) by its own step shape. Step-DZ-JTE and other termination structures are investigated for comparison using numerical simulations. Step-DZ-JTE greatly reduces the sensitivity of breakdown voltage (BV) and surface charges (SC). For a 30-μm thick epi-layer, the optimized Step-DZ-JTE shows 90% of the theoretical BV with a wide tolerance of 12.2 × 10(12) cm(−2) to the JTE dose and 85% of the theoretical BV with an improved tolerance of 3.7 × 10(12) cm(−2) to the positive SC are obtained. Furthermore, when combined with the field plate technique, the performance of the Step-DZ-JTE is further improved. MDPI 2018-11-22 /pmc/articles/PMC6315798/ /pubmed/30469458 http://dx.doi.org/10.3390/mi9120610 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Huang, Yifei
Wang, Ying
Kuang, Xiaofei
Wang, Wenju
Tang, Jianxiang
Sun, Youlei
Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
title Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
title_full Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
title_fullStr Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
title_full_unstemmed Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
title_short Step-Double-Zone-JTE for SiC Devices with Increased Tolerance to JTE Dose and Surface Charges
title_sort step-double-zone-jte for sic devices with increased tolerance to jte dose and surface charges
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6315798/
https://www.ncbi.nlm.nih.gov/pubmed/30469458
http://dx.doi.org/10.3390/mi9120610
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