Cargando…

Role of Si and C Impurities in Yellow and Blue Luminescence of Unintentionally and Si-Doped GaN

Both yellow luminescence (YL) and blue luminescence (BL) bands of GaN films have been investigated for decades, but few works report the relationship between them. In this study, two sets of GaN samples grown via metalorganic chemical vapor deposition (MOCVD) were investigated. A close relationship...

Descripción completa

Detalles Bibliográficos
Autores principales:	Liang, Feng, Zhao, Degang, Jiang, Desheng, Liu, Zongshun, Zhu, Jianjun, Chen, Ping, Yang, Jing, Liu, Shuangtao, Xing, Yao, Zhang, Liqun
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2018
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6316107/ https://www.ncbi.nlm.nih.gov/pubmed/30544659 http://dx.doi.org/10.3390/nano8121026

Ejemplares similares

Carbon-Related Defects as a Source for the Enhancement of Yellow Luminescence of Unintentionally Doped GaN
por: Liang, Feng, et al.
Publicado: (2018)

Hydrogen Can Passivate Carbon Impurities in Mg-Doped GaN
por: Zhang, Yuheng, et al.
Publicado: (2020)

Carrier Redistribution Between Two Kinds of Localized States in the InGaN/GaN Quantum Wells Studied by Photoluminescence
por: Xing, Yao, et al.
Publicado: (2019)

Investigations on the Optical Properties of InGaN/GaN Multiple Quantum Wells with Varying GaN Cap Layer Thickness
por: Wang, Xiaowei, et al.
Publicado: (2020)

Nanostars in Highly Si-Doped GaN
por: Sawicka, Marta, et al.
Publicado: (2023)

Two yellow luminescence bands in undoped GaN
por: Reshchikov, M. A., et al.
Publicado: (2018)

Uniform-Sized Indium Quantum Dots Grown on the Surface of an InGaN Epitaxial Layer by a Two-Step Cooling Process
por: Liu, Shuangtao, et al.
Publicado: (2019)

Closing the yellow gap with Eu- and Tb-doped GaN: one luminescent host resulting in three colours
por: Braun, Cordula, et al.
Publicado: (2022)

Theoretical Optical Output Power Improvement of InGaN-Based Violet Laser Diode Using AlGaN/GaN Composite Last Quantum Barrier
por: Zhang, Zhenzhuo, et al.
Publicado: (2022)

Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si
por: Sun, Yi, et al.
Publicado: (2018)

Anomalous Temperature Dependence of Photoluminescence Caused by Non-Equilibrium Distributed Carriers in InGaN/(In)GaN Multiple Quantum Wells
por: Ben, Yuhao, et al.
Publicado: (2021)

Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate
por: Lee, Moonsang, et al.
Publicado: (2018)

Vertical GaN and SiC power devices
por: Mochizuki, Kazuhiro
Publicado: (2018)

Narrow-Linewidth GaN-on-Si Laser Diode with Slot Gratings
por: Tang, Yongjun, et al.
Publicado: (2021)

Photodegradation of Si-doped GaAs nanowire
por: Pimenta, A. C. S., et al.
Publicado: (2019)

High Thermal Dissipation of Normally off p-GaN Gate AlGaN/GaN HEMTs on 6-Inch N-Doped Low-Resistivity SiC Substrate
por: Huang, Yu-Chun, et al.
Publicado: (2021)

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions
por: Cheng, Chih-Hsien, et al.
Publicado: (2016)

Blue to yellow emission from (Ga,In)/GaN quantum wells grown on pixelated silicon substrate
por: Damilano, Benjamin, et al.
Publicado: (2020)

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate
por: Weng, You-Chen, et al.
Publicado: (2023)

The Atomic Rearrangement of GaN-Based Multiple Quantum Wells in H(2)/NH(3) Mixed Gas for Improving Structural and Optical Properties
por: Ben, Yuhao, et al.
Publicado: (2021)

Synthesis, Structural and Magnetic Properties of Cobalt-Doped GaN Nanowires on Si by Atmospheric Pressure Chemical Vapor Deposition
por: Feng, Zhe Chuan, et al.
Publicado: (2022)

Growth condition dependence of unintentional oxygen incorporation in epitaxial GaN
por: Schubert, Felix, et al.
Publicado: (2016)

Strain-induced yellow to blue emission tailoring of axial InGaN/GaN quantum wells in GaN nanorods synthesized by nanoimprint lithography
por: Avit, Geoffrey, et al.
Publicado: (2021)

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate
por: Zhang, Lei, et al.
Publicado: (2014)

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics
por: Jorudas, Justinas, et al.
Publicado: (2020)

Significant improvement of reverse leakage current characteristics of Si-based homoepitaxial InGaN/GaN blue light emitting diodes
por: Lee, Moonsang, et al.
Publicado: (2019)

GaN-Based Resonant-Cavity Light-Emitting Diodes Grown on Si
por: Chen, Wen, et al.
Publicado: (2021)

GaN nanorods grown on Si (111) substrates and exciton localization
por: Park, Young S, et al.
Publicado: (2011)

Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation
por: Jian, Sheng-Rui
Publicado: (2007)

Intensive measures of luminescence in GaN/InGaN heterostructures
por: Hsiao, Jui-Ju, et al.
Publicado: (2019)

Direct growth of freestanding GaN on C-face SiC by HVPE
por: Tian, Yuan, et al.
Publicado: (2015)

Phase-matched second harmonic generation with on-chip GaN-on-Si microdisks
por: Roland, I., et al.
Publicado: (2016)

The investigation of in situ removal of Si substrates for freestanding GaN crystals by HVPE
por: Lee, Moonsang, et al.
Publicado: (2018)

Influence of Oxygen–Plasma Treatment on In-Situ SiN/AlGaN/GaN MOSHEMT with PECVD SiO(2) Gate Insulator
por: Cho, Geunho, et al.
Publicado: (2019)

High Device Performances and Noise Characteristics of AlGaN/GaN HEMTs Using In Situ SiCN and SiN Cap Layer
por: Im, Ki-Sik, et al.
Publicado: (2022)

Investigation on thermodynamics of ion-slicing of GaN and heterogeneously integrating high-quality GaN films on CMOS compatible Si(100) substrates
por: Huang, Kai, et al.
Publicado: (2017)

Defect Structure Determination of GaN Films in GaN/AlN/Si Heterostructures by HR-TEM, XRD, and Slow Positrons Experiments
por: Ene, Vladimir Lucian, et al.
Publicado: (2020)

Effects of a Si-doped InGaN Underlayer on the Optical Properties of InGaN/GaN Quantum Well Structures with Different Numbers of Quantum Wells
por: Christian, George, et al.
Publicado: (2018)

Growth of GaN nanowall network on Si (111) substrate by molecular beam epitaxy
por: Zhong, Aihua, et al.
Publicado: (2012)

The investigation of stress in freestanding GaN crystals grown from Si substrates by HVPE
por: Lee, Moonsang, et al.
Publicado: (2017)

Cannot write session to /tmp/vufind_sessions/sess_oholvs9q016vl3gsoanev4s68m