Cargando…
Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS(2)
Van der Waals epitaxy (vdWE) has drawn continuous attention, as it is unlimited by lattice-mismatch between epitaxial layers and substrates. Previous reports on the vdWE of III-nitride thin film were mainly based on two-dimensional (2D) materials by plasma pretreatment or pre-doping of other hexagon...
Autores principales: | Yin, Yue, Ren, Fang, Wang, Yunyu, Liu, Zhiqiang, Ao, Jinping, Liang, Meng, Wei, Tongbo, Yuan, Guodong, Ou, Haiyan, Yan, Jianchang, Yi, Xiaoyan, Wang, Junxi, Li, Jinmin |
---|---|
Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2018
|
Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6317269/ https://www.ncbi.nlm.nih.gov/pubmed/30518146 http://dx.doi.org/10.3390/ma11122464 |
Ejemplares similares
-
Van der Waals epitaxy of nearly single-crystalline nitride films on amorphous graphene-glass wafer
por: Ren, Fang, et al.
Publicado: (2021) -
Applications of remote epitaxy and van der Waals epitaxy
por: Roh, Ilpyo, et al.
Publicado: (2023) -
Tungsten Oxide Mediated
Quasi-van der Waals Epitaxy
of WS(2) on Sapphire
por: Cohen, Assael, et al.
Publicado: (2023) -
Van der Waals Epitaxy of III-Nitrides and Its Applications
por: Chen, Qi, et al.
Publicado: (2020) -
In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy
por: Zuo, Zheng, et al.
Publicado: (2015)