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Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes

Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger...

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Autores principales: Cao, Siyu, Zhao, Yue, Feng, Shuai, Zuo, Yuhua, Zhang, Lichun, Cheng, Buwen, Li, Chuanbo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6318157/
https://www.ncbi.nlm.nih.gov/pubmed/30607636
http://dx.doi.org/10.1186/s11671-018-2827-4
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author Cao, Siyu
Zhao, Yue
Feng, Shuai
Zuo, Yuhua
Zhang, Lichun
Cheng, Buwen
Li, Chuanbo
author_facet Cao, Siyu
Zhao, Yue
Feng, Shuai
Zuo, Yuhua
Zhang, Lichun
Cheng, Buwen
Li, Chuanbo
author_sort Cao, Siyu
collection PubMed
description Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer.
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spelling pubmed-63181572019-01-13 Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes Cao, Siyu Zhao, Yue Feng, Shuai Zuo, Yuhua Zhang, Lichun Cheng, Buwen Li, Chuanbo Nanoscale Res Lett Nano Express Theoretical analysis and two-dimensional simulation of InGaAs/InAlAs avalanche photodiodes (APDs) and single-photon APDs (SPADs) are reported. The electric-field distribution and tunneling effect of InGaAs/InAlAs APDs and SPADs are studied. When the InGaAs/InAlAs SPADs are operated under the Geiger mode, the electric field increases linearly in the absorption layer and deviate down from its linear relations in the multiplication layer. Considering the tunneling threshold electric field in multiplication layer, the thickness of the multiplication layer should be larger than 300 nm. Moreover, SPADs can work under a large bias voltage to avoid tunneling in absorption layer with high doping concentrations in the charge layer. Springer US 2019-01-03 /pmc/articles/PMC6318157/ /pubmed/30607636 http://dx.doi.org/10.1186/s11671-018-2827-4 Text en © The Author(s). 2019 Open AccessThis article is distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
spellingShingle Nano Express
Cao, Siyu
Zhao, Yue
Feng, Shuai
Zuo, Yuhua
Zhang, Lichun
Cheng, Buwen
Li, Chuanbo
Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
title Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
title_full Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
title_fullStr Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
title_full_unstemmed Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
title_short Theoretical Analysis of InGaAs/InAlAs Single-Photon Avalanche Photodiodes
title_sort theoretical analysis of ingaas/inalas single-photon avalanche photodiodes
topic Nano Express
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6318157/
https://www.ncbi.nlm.nih.gov/pubmed/30607636
http://dx.doi.org/10.1186/s11671-018-2827-4
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