SnSe(2) Field-Effect Transistor with High On/Off Ratio and Polarity-Switchable Photoconductivity

SnSe(2) field-effect transistor was fabricated based on exfoliated few-layered SnSe(2) flake, and its electrical and photoelectric properties have been investigated in detail. With the help of a drop of de-ionized (DI) water, the SnSe(2) FET can achieve an on/off ratio as high as ~ 10(4) within 1 V...

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Detalles Bibliográficos
Autores principales: Xu, Hong, Xing, Jie, Huang, Yuan, Ge, Chen, Lu, Jinghao, Han, Xu, Du, Jianyu, Hao, Huiying, Dong, Jingjing, Liu, Hao
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6326916/
https://www.ncbi.nlm.nih.gov/pubmed/30627821
http://dx.doi.org/10.1186/s11671-019-2850-0

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6326916/
https://www.ncbi.nlm.nih.gov/pubmed/30627821
http://dx.doi.org/10.1186/s11671-019-2850-0

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