A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode

An AlGaN/GaN lateral reverse blocking current regulating diode (RB-CRD) with trench Schottky anode and hybrid trench cathode has been proposed and experimentally demonstrated on silicon substrate. The Schottky barrier diode (SBD) integrated in the anode exhibits a turn-on voltage of 0.7 V and a reve...

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Detalles Bibliográficos
Autores principales: Zhang, Anbang, Zhou, Qi, Yang, Chao, Shi, Yuanyuan, Chen, Wanjun, Li, Zhaoji, Zhang, Bo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2019
Materias:
Nano Express
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6333593/
https://www.ncbi.nlm.nih.gov/pubmed/30645720
http://dx.doi.org/10.1186/s11671-019-2860-y

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6333593/
https://www.ncbi.nlm.nih.gov/pubmed/30645720
http://dx.doi.org/10.1186/s11671-019-2860-y

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