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Low-Power Highly Robust Resistance-to-Period Converter

This paper presents a novel structure of Resistance- to-Period (R-T) Converter highly robust to supply and temperature variations. Robustness is achieved by using the ratiometric approach so that complex circuits or high accuracy voltage references are not necessary. To prove the proposed architectu...

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Detalles Bibliográficos
Autores principales: Álvarez-Simón, Luis C., Gómez-Ramírez, Emmanuel, Sanz-Pascual, María Teresa
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2018
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6339158/
https://www.ncbi.nlm.nih.gov/pubmed/30577468
http://dx.doi.org/10.3390/s19010008
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author Álvarez-Simón, Luis C.
Gómez-Ramírez, Emmanuel
Sanz-Pascual, María Teresa
author_facet Álvarez-Simón, Luis C.
Gómez-Ramírez, Emmanuel
Sanz-Pascual, María Teresa
author_sort Álvarez-Simón, Luis C.
collection PubMed
description This paper presents a novel structure of Resistance- to-Period (R-T) Converter highly robust to supply and temperature variations. Robustness is achieved by using the ratiometric approach so that complex circuits or high accuracy voltage references are not necessary. To prove the proposed architecture of R-T converter, a prototype was implemented in a 0.18 [Formula: see text] m CMOS process with a single supply voltage of 1.8 V and without any stable reference voltage. Experimental results show a maximum ±1.5% output signal variation for ±10% supply voltage variation and in a 3–95 [Formula: see text] C temperature range.
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spelling pubmed-63391582019-01-23 Low-Power Highly Robust Resistance-to-Period Converter Álvarez-Simón, Luis C. Gómez-Ramírez, Emmanuel Sanz-Pascual, María Teresa Sensors (Basel) Article This paper presents a novel structure of Resistance- to-Period (R-T) Converter highly robust to supply and temperature variations. Robustness is achieved by using the ratiometric approach so that complex circuits or high accuracy voltage references are not necessary. To prove the proposed architecture of R-T converter, a prototype was implemented in a 0.18 [Formula: see text] m CMOS process with a single supply voltage of 1.8 V and without any stable reference voltage. Experimental results show a maximum ±1.5% output signal variation for ±10% supply voltage variation and in a 3–95 [Formula: see text] C temperature range. MDPI 2018-12-20 /pmc/articles/PMC6339158/ /pubmed/30577468 http://dx.doi.org/10.3390/s19010008 Text en © 2018 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Álvarez-Simón, Luis C.
Gómez-Ramírez, Emmanuel
Sanz-Pascual, María Teresa
Low-Power Highly Robust Resistance-to-Period Converter
title Low-Power Highly Robust Resistance-to-Period Converter
title_full Low-Power Highly Robust Resistance-to-Period Converter
title_fullStr Low-Power Highly Robust Resistance-to-Period Converter
title_full_unstemmed Low-Power Highly Robust Resistance-to-Period Converter
title_short Low-Power Highly Robust Resistance-to-Period Converter
title_sort low-power highly robust resistance-to-period converter
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6339158/
https://www.ncbi.nlm.nih.gov/pubmed/30577468
http://dx.doi.org/10.3390/s19010008
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