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A study on mechanism of resistance distribution characteristics of oxide-based resistive memory
Although oxide-based resistive switching memory (OxRAM) is one of the strong next-generation high capacity memory candidates, it has the critical disadvantage that deviations of resistance levels is too severe to be adopted as a high capacity memory device. More specifically, it is known that the la...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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Nature Publishing Group UK
2019
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6342999/ https://www.ncbi.nlm.nih.gov/pubmed/30670710 http://dx.doi.org/10.1038/s41598-018-35838-x |