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Enhancement of superconducting properties and flux pinning mechanism on Cr(0.0005)NbSe(2) single crystal under Hydrostatic pressure
Superconducting properties of Cr(0.0005)NbSe(2) (T(c)~6.64 K) single crystals have been investigated through the temperature dependent resistivity (~8 GPa) and DC magnetization (~1 GPa) measurements. Further, the critical current density (J(c)) as a function of applied magnetic field has been studie...
Autores principales: | , , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2019
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6344477/ https://www.ncbi.nlm.nih.gov/pubmed/30674929 http://dx.doi.org/10.1038/s41598-018-36672-x |
Sumario: | Superconducting properties of Cr(0.0005)NbSe(2) (T(c)~6.64 K) single crystals have been investigated through the temperature dependent resistivity (~8 GPa) and DC magnetization (~1 GPa) measurements. Further, the critical current density (J(c)) as a function of applied magnetic field has been studied from magnetic isotherms. The vortex pinning mechanisms have also been systematically analyzed using weak collective pinning theory as a function of pressure. The J(c) corresponds to the flux flow enhanced by the application of pressure due to increase of T(c) and vortex changes. We found that the pressure is responsible for the spatial variations in the charge carrier mean free path (δl pinning). We find that core point pinning is more dominant than surface pinning which is caused by the application of pressure. In addition, J(c)(H = 0) increases from 3.9 × 10(5) (0 GPa) to 1.3 × 10(6) (1.02 GPa) A/cm(2) at 2 K as the pressure is increased from normal pressure to 1.02 GPa. The pressure dependence of T(c) (dT(c)/dP) becomes 0.91 K/GPa and 0.75 K/GPa from magnetization and resistivity measurements respectively. We found that the pressure promotes the anisotropy nature, and decrease of coherence length and resulting in pathetic interface of the vortex core with pinning centers. |
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