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Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices

A low-cost and eco-friendly die attach process for high temperatures should be developed owing to the expansion of the field of high-temperature applications, such as high-power and high-frequency semiconductors. Pb-based and Au-based systems have been used as conventional die attach materials for h...

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Detalles Bibliográficos
Autores principales: Choi, Jinseok, Choi, Gab Soo, An, Sung Jin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2019
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6345981/
https://www.ncbi.nlm.nih.gov/pubmed/30679736
http://dx.doi.org/10.1038/s41598-018-37103-7
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author Choi, Jinseok
Choi, Gab Soo
An, Sung Jin
author_facet Choi, Jinseok
Choi, Gab Soo
An, Sung Jin
author_sort Choi, Jinseok
collection PubMed
description A low-cost and eco-friendly die attach process for high temperatures should be developed owing to the expansion of the field of high-temperature applications, such as high-power and high-frequency semiconductors. Pb-based and Au-based systems have been used as conventional die attach materials for high-temperature devices. However, these materials exhibit environmental problems and are expensive. Here, we show that the die attach process using the backside metal of the Ag/Sn/Ag sandwich structure is successfully developed for the mass production of Si devices. It has a low-temperature bonding process (235 °C), a high remelting temperature (above 400 °C), and rapid bonding time (20 ms). In addition, it exhibits better properties than Au-12Ge and Pb-10Sn backside metals, which are conventional materials for the high-temperature die attach process. After the die bonding process, various reliability tests of Si devices with the Ag/Sn/Ag backside metal structure were performed.
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spelling pubmed-63459812019-01-29 Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices Choi, Jinseok Choi, Gab Soo An, Sung Jin Sci Rep Article A low-cost and eco-friendly die attach process for high temperatures should be developed owing to the expansion of the field of high-temperature applications, such as high-power and high-frequency semiconductors. Pb-based and Au-based systems have been used as conventional die attach materials for high-temperature devices. However, these materials exhibit environmental problems and are expensive. Here, we show that the die attach process using the backside metal of the Ag/Sn/Ag sandwich structure is successfully developed for the mass production of Si devices. It has a low-temperature bonding process (235 °C), a high remelting temperature (above 400 °C), and rapid bonding time (20 ms). In addition, it exhibits better properties than Au-12Ge and Pb-10Sn backside metals, which are conventional materials for the high-temperature die attach process. After the die bonding process, various reliability tests of Si devices with the Ag/Sn/Ag backside metal structure were performed. Nature Publishing Group UK 2019-01-24 /pmc/articles/PMC6345981/ /pubmed/30679736 http://dx.doi.org/10.1038/s41598-018-37103-7 Text en © The Author(s) 2019 Open Access This article is licensed under a Creative Commons Attribution 4.0 International License, which permits use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made. The images or other third party material in this article are included in the article’s Creative Commons license, unless indicated otherwise in a credit line to the material. If material is not included in the article’s Creative Commons license and your intended use is not permitted by statutory regulation or exceeds the permitted use, you will need to obtain permission directly from the copyright holder. To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.
spellingShingle Article
Choi, Jinseok
Choi, Gab Soo
An, Sung Jin
Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices
title Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices
title_full Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices
title_fullStr Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices
title_full_unstemmed Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices
title_short Reliable low-temperature die attach process using Ag/Sn/Ag sandwich structure for high-temperature semiconductor devices
title_sort reliable low-temperature die attach process using ag/sn/ag sandwich structure for high-temperature semiconductor devices
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC6345981/
https://www.ncbi.nlm.nih.gov/pubmed/30679736
http://dx.doi.org/10.1038/s41598-018-37103-7
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